Datasheet MTP36N06V (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 |
| 页数 / 页 | 8 / 3 — MTP36N06V. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| 文件格式/大小 | PDF / 264 Kb |
| 文件语言 | 英语 |
MTP36N06V. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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MTP36N06V ELECTRICAL CHARACTERISTICS
(TJ = 25 °C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 μAdc) 60 − − Vdc Temperature Coefficient (Positive) − 61 − mV/°C Zero Gate Voltage Drain Current IDSS μAdc (VDS = 60 Vdc, VGS = 0 Vdc) − − 10 (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 °C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 μAdc) 2.0 2.6 4.0 Vdc Threshold Temperature Coefficient (Negative) − 6.0 − mV/°C Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 16 Adc) RDS(on) − 0.034 0.04 Ohm Drain−to−Source On−Voltage VDS(on) Vdc (VGS = 10 Vdc, ID = 32 Adc) − 1.25 1.54 (VGS = 10 Vdc, ID = 16 Adc, TJ = 150 °C) − − 1.47 Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc) gFS 5.0 7.83 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 1220 1700 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 337 470 Reverse Transfer Capacitance Crss − 74.8 150
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 14 30 ns (V Rise Time DD = 30 Vdc, ID = 32 Adc, tr − 138 270 VGS = 10 Vdc, Turn−Off Delay Time R t G = 9.1 Ω) d(off) − 54 100 Fall Time tf − 91 180 Gate Charge QT − 39 50 nC (See Figure 8) (V Q DS = 48 Vdc, ID = 32 Adc, 1 − 7.0 − VGS = 10 Vdc) Q2 − 17 − Q3 − 13 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (IS = 32 Adc, VGS = 0 Vdc) VSD Vdc (IS = 32 Adc, VGS = 0 Vdc, − 1.03 2.0 TJ = 150 °C) − 0.94 − Reverse Recovery Time trr − 92 − ns ta − 64 − (IS = 32 Adc, VGS = 0 Vdc, dI t S/dt = 100 A/μs) b − 28 − Reverse Recovery Stored QRR − 0.332 − μC Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD 3.5 nH (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS nH (Measured from the source lead 0.25″ from package to source bond pad) − 7.5 − 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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MTP36N06V ELECTRICAL CHARACTERISTICS
(TJ = 25 °C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 μAdc) 60 − − Vdc Temperature Coefficient (Positive) − 61 − mV/°C Zero Gate Voltage Drain Current IDSS μAdc (VDS = 60 Vdc, VGS = 0 Vdc) − − 10 (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 °C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 μAdc) 2.0 2.6 4.0 Vdc Threshold Temperature Coefficient (Negative) − 6.0 − mV/°C Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 16 Adc) RDS(on) − 0.034 0.04 Ohm Drain−to−Source On−Voltage VDS(on) Vdc (VGS = 10 Vdc, ID = 32 Adc) − 1.25 1.54 (VGS = 10 Vdc, ID = 16 Adc, TJ = 150 °C) − − 1.47 Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc) gFS 5.0 7.83 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 1220 1700 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 337 470 Reverse Transfer Capacitance Crss − 74.8 150
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 14 30 ns (V Rise Time DD = 30 Vdc, ID = 32 Adc, tr − 138 270 VGS = 10 Vdc, Turn−Off Delay Time R t G = 9.1 Ω) d(off) − 54 100 Fall Time tf − 91 180 Gate Charge QT − 39 50 nC (See Figure 8) (V Q DS = 48 Vdc, ID = 32 Adc, 1 − 7.0 − VGS = 10 Vdc) Q2 − 17 − Q3 − 13 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (IS = 32 Adc, VGS = 0 Vdc) VSD Vdc (IS = 32 Adc, VGS = 0 Vdc, − 1.03 2.0 TJ = 150 °C) − 0.94 − Reverse Recovery Time trr − 92 − ns ta − 64 − (IS = 32 Adc, VGS = 0 Vdc, dI t S/dt = 100 A/μs) b − 28 − Reverse Recovery Stored QRR − 0.332 − μC Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD 3.5 nH (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS nH (Measured from the source lead 0.25″ from package to source bond pad) − 7.5 − 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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