Datasheet KSB1366 (Fairchild) - 2

制造商Fairchild
描述LOW FREQUENCY POWER AMPLIFIER
页数 / 页4 / 2 — KSB136. Typical Characteristics. 1000. 100. -0.01. -0.1. -10. Figure 1. …
文件格式/大小PDF / 58 Kb
文件语言英语

KSB136. Typical Characteristics. 1000. 100. -0.01. -0.1. -10. Figure 1. Static Characteristic. Figure 2. DC current Gain. -0.0. -0.4. -0.8

KSB136 Typical Characteristics 1000 100 -0.01 -0.1 -10 Figure 1 Static Characteristic Figure 2 DC current Gain -0.0 -0.4 -0.8

该数据表的模型线

文件文字版本

KSB136 Typical Characteristics 6 -5 1000
VCE = -5V
-4
A RENT N 80m 70mA
100
= - 60mA = - CUR I = - B IB GAI
-3
IB IB = -50mA R O IB = -40mA IB = -30mA ECT L URRENT
-2
L IB = -20mA
10
, CO I , DC C B = -10mA [A]
-1
h FE I C IB = 0
-0 1 -0 -1 -2 -3 -4 -5 -0.01 -0.1 -1 -10
V I CE[V], COLLECTOR-EMITTER VOLTAGE C[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain -4
V
-10
CE = -5V IC = 10 IB E AG T
-3
L VO
-1
N CURRENT IO T A
-2
OR R U CT E L L
-0.1 -1
], CO t)[V], SAT a [A (s I C CEV
-0 -0.0 -0.4 -0.8 -1.2 -1.6 -0.01 -0.01 -0.1 -1 -10
VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 40
ICmax(pulse) 100m 1m 10m
35
S S s ICmax(DC) N 1S
30
IO RRENT AT
25
DC IP R CU
-1
O ISS D
20
R ECT E L L W
15
O ], PO
10
[A], C X [W I C D MA P O
5
CEV
-0.1 -1 -10 -100 0 0 25 50 75 100 125 150 175 200
VCE[V], COLLECTOR-EMITTER VOLTAGE o TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International Rev. A, February 2000