Datasheet BF909, BF909R (NXP) - 2
| 制造商 | NXP |
| 描述 | N-channel dual gate MOS-FETs |
| 页数 / 页 | 12 / 2 — NXP Semiconductors. Product specification. N-channel dual gate MOS-FETs. … |
| 文件格式/大小 | PDF / 328 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. Product specification. N-channel dual gate MOS-FETs. BF909; BF909R. FEATURES. CAUTION. APPLICATIONS. PINNING. PIN
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文件文字版本
NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R FEATURES
transistor consists of an amplifier MOS-FET with source • and substrate interconnected and an internal bias circuit to Specially designed for use at 5 V supply voltage ensure good cross-modulation performance during AGC. • High forward transfer admittance • Short channel transistor with high forward transfer
CAUTION
admittance to input capacitance ratio The device is supplied in an antistatic package. The • Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static • Superior cross-modulation performance during AGC. discharge during transport or handling.
APPLICATIONS PINNING
• VHF and UHF applications with 3 to 7 V supply voltage
PIN SYMBOL DESCRIPTION
such as television tuners and professional communications equipment. 1 s, b source 2 d drain
DESCRIPTION
3 g2 gate 2 4 g Enhancement type field-effect transistor in a plastic 1 gate 1 microminiature SOT143 or SOT143R package. The d handbook, halfpage d handbook, halfpage 3 4 4 3 g g 2 2 g g 1 1 1 2 2 1 s,b s,b Top view MAM124 Top view MAM125 - 1
BF909 marking code:
%M3.
BF909R marking code:
%M4. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage − − 7 V ID drain current − − 40 mA Ptot total power dissipation − − 200 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 − 3.6 4.3 pF Crs reverse transfer capacitance f = 1 MHz − 35 50 fF F noise figure f = 800 MHz − 2 2.8 dB Rev. 02 - 19 November 2007 2 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history
transistor consists of an amplifier MOS-FET with source • and substrate interconnected and an internal bias circuit to Specially designed for use at 5 V supply voltage ensure good cross-modulation performance during AGC. • High forward transfer admittance • Short channel transistor with high forward transfer
CAUTION
admittance to input capacitance ratio The device is supplied in an antistatic package. The • Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static • Superior cross-modulation performance during AGC. discharge during transport or handling.
APPLICATIONS PINNING
• VHF and UHF applications with 3 to 7 V supply voltage
PIN SYMBOL DESCRIPTION
such as television tuners and professional communications equipment. 1 s, b source 2 d drain
DESCRIPTION
3 g2 gate 2 4 g Enhancement type field-effect transistor in a plastic 1 gate 1 microminiature SOT143 or SOT143R package. The d handbook, halfpage d handbook, halfpage 3 4 4 3 g g 2 2 g g 1 1 1 2 2 1 s,b s,b Top view MAM124 Top view MAM125 - 1
BF909 marking code:
%M3.
BF909R marking code:
%M4. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage − − 7 V ID drain current − − 40 mA Ptot total power dissipation − − 200 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 − 3.6 4.3 pF Crs reverse transfer capacitance f = 1 MHz − 35 50 fF F noise figure f = 800 MHz − 2 2.8 dB Rev. 02 - 19 November 2007 2 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history