Datasheet ESDAxxSCx (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | Quad Transil array for ESD protection |
| 页数 / 页 | 9 / 3 — ESDAxxSCx. Characteristics. Table 4. Electrical characteristics - values … |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
ESDAxxSCx. Characteristics. Table 4. Electrical characteristics - values (Tamb = 25 °C). VBR @ IR. IRM @ VRM. VCL @ IPP. VF@ IF. typ
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文件文字版本
ESDAxxSCx Characteristics Table 4. Electrical characteristics - values (Tamb = 25 °C) VBR @ IR IRM @ VRM VCL @ IPP
α
T C VF@ IF typ. Order codes min. max. max. max. max.(1) max. 0 V bias V V mA µA V V A 10-4/°C pF V mA
ESDA5V3SC5 5.3 5.9 1 2 3 21 22 5 320 1.25 200 ESDA5V3SC6 ESDA6V1SC5 6.1 7.2 1 2 5.25 19 18 6 190 1.25 200 ESDA6V1SC6 ESDA14V2SC5 14.2 15.8 1 5 12 35 14 10 100 1.25 200 ESDA14V2SC6 ESDA19SC6 19 21 1 0.1 15 39 13 8.5 80 1.2 10 ESDA25SC6 25 30 1 1 24 51 9 10 60 1.2 10 1. VBR @ TJ = VBR @ 25 °C x (1 + αT x (TJ – 25))
Figure 3. Peak power dissipation versus initial Figure 4. Peak pulse power versus exponential junction temperature pulse duration (Tj initial = 25 °C) P [ P PP Tj initial] / PPP[Tj initial=25°C] 10000 PP (W)
1.1 ESDA5V3 - ESDA6V1 1.0 ESDA14V2 - ESDA19 - ESDA25 0.9 0.8 0.7 0.6
1000
0.5 0.4 0.3 0.2 0.1
Tj initial (°C) tp (µs)
0.0
100
0 25 50 75 100 125 150
1 10 100 Figure 5. Clamping voltage versus peak pulse Figure 6. Capacitance versus reverse applied current (Tj initial = 25 °C). Rectangular voltage waveform tp = 2.5 µs IP P (A ) C (pF )
50.0 500 E S DA25S C 6 F =1MHz VOS C=30mVR MS E S DA19S C 6 10.0 E S DA5V3S C 5/S C 6 E S DA14V 2S C 5/S C 6 100 E S DA6V1S C 5/S C 6 E S DA6V 1S C 5/S C 6 1.0 E S DA5V 3S C 5/S C 6 E S DA14V2S C 5/S C 6 E S DA19S C 6 tp=2.5µs
V C L (V )
E S DA25S C 6 0.1
VR (V)
10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 1 2 5 10 20 50 DocID7056 Rev 10 3/9 9 Document Outline Figure 1. ESDAxxSC5 functional diagram Figure 2. ESDAxxSC6 functional diagram Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (Tamb = 25 °C) Table 3. Electrical characteristics - definitions (Tamb = 25 °C) Table 4. Electrical characteristics - values (Tamb = 25 °C) Figure 3. Peak power dissipation versus initial junction temperature Figure 4. Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) Figure 5. Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs Figure 6. Capacitance versus reverse applied voltage Figure 7. Relative variation of leakage current versus junction temperature Figure 8. Peak forward voltage drop versus peak forward current 2 Ordering information Figure 9. Ordering information scheme 3 Package information Table 5. SOT23-5L dimensions Figure 10. SOT23-5L footprint (dimensions in mm) Table 6. SOT23-6L dimensions Figure 11. SOT23-6L footprint (dimensions in mm) 4 Ordering information Table 7. Ordering information 5 Revision history Table 8. Document revision history
α
T C VF@ IF typ. Order codes min. max. max. max. max.(1) max. 0 V bias V V mA µA V V A 10-4/°C pF V mA
ESDA5V3SC5 5.3 5.9 1 2 3 21 22 5 320 1.25 200 ESDA5V3SC6 ESDA6V1SC5 6.1 7.2 1 2 5.25 19 18 6 190 1.25 200 ESDA6V1SC6 ESDA14V2SC5 14.2 15.8 1 5 12 35 14 10 100 1.25 200 ESDA14V2SC6 ESDA19SC6 19 21 1 0.1 15 39 13 8.5 80 1.2 10 ESDA25SC6 25 30 1 1 24 51 9 10 60 1.2 10 1. VBR @ TJ = VBR @ 25 °C x (1 + αT x (TJ – 25))
Figure 3. Peak power dissipation versus initial Figure 4. Peak pulse power versus exponential junction temperature pulse duration (Tj initial = 25 °C) P [ P PP Tj initial] / PPP[Tj initial=25°C] 10000 PP (W)
1.1 ESDA5V3 - ESDA6V1 1.0 ESDA14V2 - ESDA19 - ESDA25 0.9 0.8 0.7 0.6
1000
0.5 0.4 0.3 0.2 0.1
Tj initial (°C) tp (µs)
0.0
100
0 25 50 75 100 125 150
1 10 100 Figure 5. Clamping voltage versus peak pulse Figure 6. Capacitance versus reverse applied current (Tj initial = 25 °C). Rectangular voltage waveform tp = 2.5 µs IP P (A ) C (pF )
50.0 500 E S DA25S C 6 F =1MHz VOS C=30mVR MS E S DA19S C 6 10.0 E S DA5V3S C 5/S C 6 E S DA14V 2S C 5/S C 6 100 E S DA6V1S C 5/S C 6 E S DA6V 1S C 5/S C 6 1.0 E S DA5V 3S C 5/S C 6 E S DA14V2S C 5/S C 6 E S DA19S C 6 tp=2.5µs
V C L (V )
E S DA25S C 6 0.1
VR (V)
10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 1 2 5 10 20 50 DocID7056 Rev 10 3/9 9 Document Outline Figure 1. ESDAxxSC5 functional diagram Figure 2. ESDAxxSC6 functional diagram Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (Tamb = 25 °C) Table 3. Electrical characteristics - definitions (Tamb = 25 °C) Table 4. Electrical characteristics - values (Tamb = 25 °C) Figure 3. Peak power dissipation versus initial junction temperature Figure 4. Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) Figure 5. Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs Figure 6. Capacitance versus reverse applied voltage Figure 7. Relative variation of leakage current versus junction temperature Figure 8. Peak forward voltage drop versus peak forward current 2 Ordering information Figure 9. Ordering information scheme 3 Package information Table 5. SOT23-5L dimensions Figure 10. SOT23-5L footprint (dimensions in mm) Table 6. SOT23-6L dimensions Figure 11. SOT23-6L footprint (dimensions in mm) 4 Ordering information Table 7. Ordering information 5 Revision history Table 8. Document revision history