Datasheet FDV303N (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Digital FET, N-Channel |
| 页数 / 页 | 7 / 2 — FDV303N. MOSFET MAXIMUM RATINGS. Symbol. Parameter. Units. THERMAL … |
| 修订版 | 5 |
| 文件格式/大小 | PDF / 270 Kb |
| 文件语言 | 英语 |
FDV303N. MOSFET MAXIMUM RATINGS. Symbol. Parameter. Units. THERMAL CHARACTERISTICS. Ratings. ORDERING INFORMATION. Device. Package
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文件文字版本
FDV303N MOSFET MAXIMUM RATINGS
TA = 25°C unless otherwise noted
Symbol Parameter FDV303N Units
VDSS Drain−Source Voltage, Power Supply Voltage 25 V VGSS Gate−Source Voltage, VIN 8 V ID Drain/Output Current A − Continuous 0.68 − Pulsed 2 PD Maximum Power Dissipation 0.35 W TJ, TSTG Operating and Storage Temperature Range −55 to 150 °C ESD Electrostatic Discharge Rating MIL−STD−883D Human Body Model 6.0 kV (100 pf / 1500 W)
THERMAL CHARACTERISTICS Symbol Parameter Ratings Units
RθJA Thermal Resistance, Junction−to−Ambient 357 °C/W
ORDERING INFORMATION Device Package Shipping†
FDV303N SOT−23 3000 / Tape & Reel Case 318−08 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
www.onsemi.com 2
TA = 25°C unless otherwise noted
Symbol Parameter FDV303N Units
VDSS Drain−Source Voltage, Power Supply Voltage 25 V VGSS Gate−Source Voltage, VIN 8 V ID Drain/Output Current A − Continuous 0.68 − Pulsed 2 PD Maximum Power Dissipation 0.35 W TJ, TSTG Operating and Storage Temperature Range −55 to 150 °C ESD Electrostatic Discharge Rating MIL−STD−883D Human Body Model 6.0 kV (100 pf / 1500 W)
THERMAL CHARACTERISTICS Symbol Parameter Ratings Units
RθJA Thermal Resistance, Junction−to−Ambient 357 °C/W
ORDERING INFORMATION Device Package Shipping†
FDV303N SOT−23 3000 / Tape & Reel Case 318−08 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
www.onsemi.com 2