Datasheet FDD6637 (Fairchild) - 2

FDD Electrical Characteristics
T = 25°C unless otherwise noted A
663 Symbol Parameter Test Conditions Min Typ Max Units 7 Drain-Source Avalanche Ratings
E
35
AS Drain-Source Avalanche Energy V (Single Pulse) DD = -35 V, ID= -11 A, L=1mH 61 mJ
V P-
IAS Drain-Source Avalanche Current –14 A
Off Characteristics(Note 2) C
Drain–Source Breakdown BV
h
DSS V Voltage GS = 0 V, ID = –250 μA –35 V
a
IDSS Zero Gate Voltage Drain Current V
nn
DS = –28 V, VGS = 0 V –1 μA IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA
e l P On Characteristics (Note 2)
V
o
GS(th) Gate Threshold Voltage VDS = VGS, ID = –250 μA –1 –1.6 –3 V
w
R 9.7 11.6 DS(on) Static Drain–Source VGS = –10 V, ID = –14 A mΩ On–Resistance V 14.4 18
e
GS = –4.5 V, ID = –11 A
rTr
V 14.7 19 GS = –10 V, ID = –14 A, TJ=125°C gFS Forward Transconductance VDS =–5 V, ID = –14 A 35 S
e n Dynamic Characteristics c
C
h
iss Input Capacitance 2370 pF V ® C DS = –20 V, V GS = 0 V, oss Output Capacitance 470 pF f = 1.0 MHz
M
Crss Reverse Transfer Capacitance 250 pF
OS
RG Gate Resistance f = 1.0 MHz 3.6 Ω
FET Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 18 32 ns tr Turn–On Rise Time V 10 20 ns DD = –20 V, ID = –1 A, td(off) Turn–Off Delay Time VGS = –10 V, RGEN = 6 Ω 62 100 ns tf Turn–Off Fall Time 36 58 ns Qg Total Gate Charge, VGS = –10V 45 63 nC Qg Total Gate Charge, VGS = –5V 25 35 nC VDS = – 20 V, ID = –14 A Q gs Gate–Source Charge 7 nC Qgd Gate–Drain Charge 10 nC FDD6637 Rev. C(W) www.fairchildsemi.com