Datasheet ZVP2106A (Diodes) - 2
| 制造商 | Diodes |
| 描述 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 页数 / 页 | 3 / 2 — P-CHANNEL ENHANCEMENT. ZVP2106A. MODE VERTICAL DMOS FET. ISSUE 2 – MARCH … |
| 文件格式/大小 | PDF / 55 Kb |
| 文件语言 | 英语 |
P-CHANNEL ENHANCEMENT. ZVP2106A. MODE VERTICAL DMOS FET. ISSUE 2 – MARCH 94. TYPICAL CHARACTERISTICS. E-Line. TO92 Compatible
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P-CHANNEL ENHANCEMENT ZVP2106A MODE VERTICAL DMOS FET ZVP2106A ISSUE 2 – MARCH 94 TYPICAL CHARACTERISTICS
FEATURES * 60 Volt VDS -3.5 * R =5 -2.0 Ω VGS= DS(on) ps) -20V Am -3.0 -1.8 VGS= -18V t ( -14V -1.6 n -10V -2.5 er -1.4 D r -12V -9V G -2.0 -1.2 S Cu -10V -8V -1.0 ain
E-Line
-1.5 -9V Dr -0.8 -7V -8V
TO92 Compatible
te -1.0 -0.6 a -7V -6V
ABSOLUTE MAXIMUM RATINGS.
St -0.4 -0.5 -6V -5V -5V -0.2 -4V PARAMETER SYMBOL VALUE UNIT On-- 0 -4V -On-State Drain Current (Amps) -3.5V ) 0 n n Drain-Source Voltage V O DS -60 V D( 0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 I D(O I Continuous Drain Current at Tamb=25°C ID -280 mA VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current IDM -4 A
Output Characteristics Saturation Characteristics
Gate Source Voltage V ± GS 20 V Power Dissipation at Tamb=25°C Ptot 700 mW -10 Operating and Storage Temperature Range T -1.6 j:Tstg -55 to +150 °C ) lts o -1.4 -8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
-1.2 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. age (V -6 -1.0 olt VDS=-10V Drain-Source Breakdown BV V -0.8 DSS -60 V ID=-1mA, VGS=0V e Voltage -4 ID= -0.6 ourc -1A Gate-Source Threshold VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS S -0.4 -2 Voltage in -0.5A ra On-State Drain Current (Amps) -0.2 D -) -0.25A n Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V O DS- 0 V D( 0 -2 -4 -6 -8 -10 I 0 -2 -4 -6 -8 -10 Zero Gate Voltage Drain I µ DSS -0.5 A VDS=-60 V, VGS=0 Current -100 µA VDS=-48 V, VGS=0V, T=125°C(2) VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) ID(on) -1 A VDS=-18 V, VGS=-10V
Transfer Characteristics Voltage Saturation Characteristics
Static Drain-Source On-State RDS(on) 5 Ω VGS=-10V,ID=-500mA Resistance (1) VGS=-5V -6V -7V -8V -9V -1 0V Forward Transconductance g (Ω 10 2.6 fs 150 mS VDS=-18V,ID=-500mA ce (1)(2) 2.4 n (th) a S G 2.2 Input Capacitance (2) C
on)
iss 100 pF sist V 2.0 5 nd
nce RDS(
Common Source Output Coss 60 pF VDS=-18V, VGS=0V, f=1MHz Re a 1.8 VGS=-10V Capacitance (2) n)
esista
rce o ID=-0.5A ( 1.6
e R
u S D Reverse Transfer C 1.4 rss 20 pF
n-Sourc
So
ai
Capacitance (2) in 1.2
Dr
VGS=VDS ra 1.0 Turn-On Delay Time (2)(3) t
Gate
ID=-1mA d(on) 7 ns -D
Threshold
0.8
Voltage VGS(th)
Rise Time (2)(3) tr 15 ns 1 Normalised R 0.6 V ≈ DD -18V, ID=-500mA DS(ON) -40 -20 0 20 40 60 80 100 120 140 160 180 -0.1 -1.0 -2.0 Turn-Off Delay Time (2)(3) t R d(off) 12 ns ID-Drain Current (Amps) Fall Time (2)(3) t Tj-Junction Temperature (°C) f 15 ns (1) Measured under pulsed conditions. Width=300
On-resistance v drain current
µs. Duty cycle ≤2%
Normalised RDS(on) and VGS(th) vs Temperature
(2) Sample test. ( 3-418 3-417 3 ) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
FEATURES * 60 Volt VDS -3.5 * R =5 -2.0 Ω VGS= DS(on) ps) -20V Am -3.0 -1.8 VGS= -18V t ( -14V -1.6 n -10V -2.5 er -1.4 D r -12V -9V G -2.0 -1.2 S Cu -10V -8V -1.0 ain
E-Line
-1.5 -9V Dr -0.8 -7V -8V
TO92 Compatible
te -1.0 -0.6 a -7V -6V
ABSOLUTE MAXIMUM RATINGS.
St -0.4 -0.5 -6V -5V -5V -0.2 -4V PARAMETER SYMBOL VALUE UNIT On-- 0 -4V -On-State Drain Current (Amps) -3.5V ) 0 n n Drain-Source Voltage V O DS -60 V D( 0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 I D(O I Continuous Drain Current at Tamb=25°C ID -280 mA VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current IDM -4 A
Output Characteristics Saturation Characteristics
Gate Source Voltage V ± GS 20 V Power Dissipation at Tamb=25°C Ptot 700 mW -10 Operating and Storage Temperature Range T -1.6 j:Tstg -55 to +150 °C ) lts o -1.4 -8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
-1.2 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. age (V -6 -1.0 olt VDS=-10V Drain-Source Breakdown BV V -0.8 DSS -60 V ID=-1mA, VGS=0V e Voltage -4 ID= -0.6 ourc -1A Gate-Source Threshold VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS S -0.4 -2 Voltage in -0.5A ra On-State Drain Current (Amps) -0.2 D -) -0.25A n Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V O DS- 0 V D( 0 -2 -4 -6 -8 -10 I 0 -2 -4 -6 -8 -10 Zero Gate Voltage Drain I µ DSS -0.5 A VDS=-60 V, VGS=0 Current -100 µA VDS=-48 V, VGS=0V, T=125°C(2) VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) ID(on) -1 A VDS=-18 V, VGS=-10V
Transfer Characteristics Voltage Saturation Characteristics
Static Drain-Source On-State RDS(on) 5 Ω VGS=-10V,ID=-500mA Resistance (1) VGS=-5V -6V -7V -8V -9V -1 0V Forward Transconductance g (Ω 10 2.6 fs 150 mS VDS=-18V,ID=-500mA ce (1)(2) 2.4 n (th) a S G 2.2 Input Capacitance (2) C
on)
iss 100 pF sist V 2.0 5 nd
nce RDS(
Common Source Output Coss 60 pF VDS=-18V, VGS=0V, f=1MHz Re a 1.8 VGS=-10V Capacitance (2) n)
esista
rce o ID=-0.5A ( 1.6
e R
u S D Reverse Transfer C 1.4 rss 20 pF
n-Sourc
So
ai
Capacitance (2) in 1.2
Dr
VGS=VDS ra 1.0 Turn-On Delay Time (2)(3) t
Gate
ID=-1mA d(on) 7 ns -D
Threshold
0.8
Voltage VGS(th)
Rise Time (2)(3) tr 15 ns 1 Normalised R 0.6 V ≈ DD -18V, ID=-500mA DS(ON) -40 -20 0 20 40 60 80 100 120 140 160 180 -0.1 -1.0 -2.0 Turn-Off Delay Time (2)(3) t R d(off) 12 ns ID-Drain Current (Amps) Fall Time (2)(3) t Tj-Junction Temperature (°C) f 15 ns (1) Measured under pulsed conditions. Width=300
On-resistance v drain current
µs. Duty cycle ≤2%
Normalised RDS(on) and VGS(th) vs Temperature
(2) Sample test. ( 3-418 3-417 3 ) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator