Datasheet ZVP2106A (Diodes) - 3
| 制造商 | Diodes |
| 描述 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 页数 / 页 | 3 / 3 — ZVP2106A. TYPICAL CHARACTERISTICS. Transconductance v drain current. … |
| 文件格式/大小 | PDF / 55 Kb |
| 文件语言 | 英语 |
ZVP2106A. TYPICAL CHARACTERISTICS. Transconductance v drain current. Transconductance v gate-source voltage
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ZVP2106A TYPICAL CHARACTERISTICS
300 300 250 250 VDS=-10V VDS=-10V nce (mS) 200 200 atc 150 150 ductance (mS) ndu n o 100 o c 100 sc n ra 50 rans 50 T- -T fs s g f 0 g 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 0 -2 -4 -6 -8 -10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
) 0 lts 100 o -2 V ( e -4 VDS= 80 -20V -30V -50V oltag -6 60 -8 Ciss ce Vr -10 40 Sou -12 20 Coss Gate -14 C-Capacitance (pF) - Crss S 0 G -16 V 0 0 -10 -20 -30 -40 -50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
3-419
300 300 250 250 VDS=-10V VDS=-10V nce (mS) 200 200 atc 150 150 ductance (mS) ndu n o 100 o c 100 sc n ra 50 rans 50 T- -T fs s g f 0 g 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 0 -2 -4 -6 -8 -10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
) 0 lts 100 o -2 V ( e -4 VDS= 80 -20V -30V -50V oltag -6 60 -8 Ciss ce Vr -10 40 Sou -12 20 Coss Gate -14 C-Capacitance (pF) - Crss S 0 G -16 V 0 0 -10 -20 -30 -40 -50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
3-419