Datasheet BUZ71 (STMicroelectronics)
| 制造商 | STMicroelectronics |
| 描述 | N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET |
| 页数 / 页 | 8 / 1 — BUZ71. T YPE. VDSS. RDS(on). APPLICATIONS. TO-220. INTERNAL SCHEMATIC … |
| 文件格式/大小 | PDF / 89 Kb |
| 文件语言 | 英语 |
BUZ71. T YPE. VDSS. RDS(on). APPLICATIONS. TO-220. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Value. Un it
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BUZ71
N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET
T YPE VDSS RDS(on) ID
BUZ71 50 V < 0.1 Ω 17 A ■ TYPICAL RDS(on) = 0.085 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE 3 2 1
APPLICATIONS TO-220
■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION,
INTERNAL SCHEMATIC DIAGRAM
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it
VDS Drain-source Voltage (VGS = 0) 50 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 50 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc = 25 oC 17 A IDM Drain Current (pulsed) 68 A Ptot T otal Dissipat ion at Tc = 25 oC 60 W Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C DIN HUMIDI TY CAT EGORY (DI N 40040) E I EC CLIMAT IC CAT EG ORY (DI N IEC 68-1) 55/ 150/56 First digit of the datecode being Z or K identifies silicon characterized in this datasheet. July 1999 1/8
BUZ71
N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET
T YPE VDSS RDS(on) ID
BUZ71 50 V < 0.1 Ω 17 A ■ TYPICAL RDS(on) = 0.085 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE 3 2 1
APPLICATIONS TO-220
■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION,
INTERNAL SCHEMATIC DIAGRAM
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it
VDS Drain-source Voltage (VGS = 0) 50 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 50 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc = 25 oC 17 A IDM Drain Current (pulsed) 68 A Ptot T otal Dissipat ion at Tc = 25 oC 60 W Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C DIN HUMIDI TY CAT EGORY (DI N 40040) E I EC CLIMAT IC CAT EG ORY (DI N IEC 68-1) 55/ 150/56 First digit of the datecode being Z or K identifies silicon characterized in this datasheet. July 1999 1/8