Datasheet ADG5208, ADG5209 (Analog Devices) - 7

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Data Sheet ADG5208/ADG5209 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 170 ns typ RL = 300 Ω, CL = 35 pF 205 225 235 ns max VS = 18 V; see Figure 33 tON (EN) 150 ns typ RL = 300 Ω, CL = 35 pF 180 195 215 ns max VS = 18 V; see Figure 35 tOFF (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 225 225 230 ns max VS = 18 V; see Figure 35 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF 25 ns min VS1 = VS2 = 18 V; see Figure 34 Charge Injection, QINJ 0.3 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32 ADG5208 105 MHz typ ADG5209 195 MHz typ Insertion Loss −6.2 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 32 CS (Off) 2.7 pF typ VS = 18 V, f = 1 MHz CD (Off) ADG5208 32 pF typ VS = 18 V, f = 1 MHz ADG5209 16 pF typ VS = 18 V, f = 1 MHz CD (On), CS (On) ADG5208 35 pF typ VS = 18 V, f = 1 MHz ADG5209 20 pF typ VS = 18 V, f = 1 MHz POWER REQUIREMENTS VDD = 39.6 V IDD 80 µA typ Digital inputs = 0 V or VDD 100 130 µA max VDD 9/40 V min/V max GND = 0 V, VSS = 0 V 1 Guaranteed by design; not subject to production test. Rev. C | Page 7 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide