Datasheet ADG1201 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Low Capacitance, Low Charge Injection, ±15 V/+12 V iCMOS SPST in SOT-23 |
| 页数 / 页 | 14 / 3 — Data Sheet. ADG1201. SPECIFICATIONS DUAL SUPPLY. Table 1. −40°C to. … |
| 修订版 | A |
| 文件格式/大小 | PDF / 418 Kb |
| 文件语言 | 英语 |
Data Sheet. ADG1201. SPECIFICATIONS DUAL SUPPLY. Table 1. −40°C to. Parameter. 25°C. +85°C. +125°C. Unit. Test Conditions/Comments
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Data Sheet ADG1201 SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. −40°C to −40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VDD = +13.5 V, VSS = −13.5 V 200 240 270 Ω max Analog voltage on Terminal S (VS) = ±10 V, source leakage current (IS) = −1 mA, see Figure 20 On Resistance Flatness 20 Ω typ VS = −5 V, 0 V, and +5 V, IS = −1 mA (RFLAT(ON)) 60 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage (IS (Off)) ±0.004 nA typ VS = ±10 V, analog voltage on Terminal D (VD) = ±10 V, see Figure 21 ±0.1 ±0.6 ±1 nA max Drain Off Leakage (ID (Off)) ±0.004 nA typ VS = ±10 V, VD = ±10 V, see Figure 21 ±0.1 ±0.6 ±1 nA max Channel On Leakage (ID, IS ±0.04 nA typ VS = VD = ±10 V, see Figure 22 (On)) ±0.15 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage (VINH) 2.0 V min Input Low Voltage (VINL) 0.8 V max Input Current (IINL or IINH) 0.005 µA typ Voltage on IN pin (VIN) = VINL or VINH ±0.1 µA max Digital Input Capacitance 2.5 pF typ (CIN) DYNAMIC CHARACTERISTICS1 On Time (tON) 140 ns typ Load resistance (RL) = 300 Ω, load capacitance (CL) = 35 pF 170 200 230 ns max VS = 10 V, see Figure 26 Off Time (tOFF) 90 ns typ RL = 300 Ω, CL = 35 pF 105 130 141 ns max VS = 10 V, see Figure 26 Charge Injection −0.8 pC typ VS = 0 V, supply resistance (RS) = 0 Ω, CL = 1 nF, see Figure 27 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23 Total Harmonic Distortion + 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz Noise (THD + N) −3 dB Bandwidth 660 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 24 Off Switch Source 2.4 pF typ VS = 0 V, frequency = 1 MHz Capacitance (CS (Off)) 3 pF max VS = 0 V, frequency = 1 MHz Off Switch Drain 2.8 pF typ VS = 0 V, frequency = 1 MHz Capacitance (CD (Off)) 3.3 pF max VS = 0 V, frequency = 1 MHz On Switch Capacitance (CD, 4.7 pF typ VS = 0 V, frequency = 1 MHz CS (On)) 5.6 pF max VS = 0 V, frequency = 1 MHz Rev. A | Page 3 of 14 Document Outline Features Applications Functional Block Diagram General Description Product Highlights Revision History Specifications Dual Supply Single Supply Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Outline Dimensions Ordering Guide
Data Sheet ADG1201 SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. −40°C to −40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VDD = +13.5 V, VSS = −13.5 V 200 240 270 Ω max Analog voltage on Terminal S (VS) = ±10 V, source leakage current (IS) = −1 mA, see Figure 20 On Resistance Flatness 20 Ω typ VS = −5 V, 0 V, and +5 V, IS = −1 mA (RFLAT(ON)) 60 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage (IS (Off)) ±0.004 nA typ VS = ±10 V, analog voltage on Terminal D (VD) = ±10 V, see Figure 21 ±0.1 ±0.6 ±1 nA max Drain Off Leakage (ID (Off)) ±0.004 nA typ VS = ±10 V, VD = ±10 V, see Figure 21 ±0.1 ±0.6 ±1 nA max Channel On Leakage (ID, IS ±0.04 nA typ VS = VD = ±10 V, see Figure 22 (On)) ±0.15 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage (VINH) 2.0 V min Input Low Voltage (VINL) 0.8 V max Input Current (IINL or IINH) 0.005 µA typ Voltage on IN pin (VIN) = VINL or VINH ±0.1 µA max Digital Input Capacitance 2.5 pF typ (CIN) DYNAMIC CHARACTERISTICS1 On Time (tON) 140 ns typ Load resistance (RL) = 300 Ω, load capacitance (CL) = 35 pF 170 200 230 ns max VS = 10 V, see Figure 26 Off Time (tOFF) 90 ns typ RL = 300 Ω, CL = 35 pF 105 130 141 ns max VS = 10 V, see Figure 26 Charge Injection −0.8 pC typ VS = 0 V, supply resistance (RS) = 0 Ω, CL = 1 nF, see Figure 27 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23 Total Harmonic Distortion + 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz Noise (THD + N) −3 dB Bandwidth 660 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 24 Off Switch Source 2.4 pF typ VS = 0 V, frequency = 1 MHz Capacitance (CS (Off)) 3 pF max VS = 0 V, frequency = 1 MHz Off Switch Drain 2.8 pF typ VS = 0 V, frequency = 1 MHz Capacitance (CD (Off)) 3.3 pF max VS = 0 V, frequency = 1 MHz On Switch Capacitance (CD, 4.7 pF typ VS = 0 V, frequency = 1 MHz CS (On)) 5.6 pF max VS = 0 V, frequency = 1 MHz Rev. A | Page 3 of 14 Document Outline Features Applications Functional Block Diagram General Description Product Highlights Revision History Specifications Dual Supply Single Supply Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Outline Dimensions Ordering Guide