Datasheet IRLB8743PbF (Infineon)
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 1 — Applications. VDSS RDS(on) max. 30V. 3.2m. 36nC. Benefits. Absolute … |
| 修订版 | 01_01 |
| 文件格式/大小 | PDF / 282 Kb |
| 文件语言 | 英语 |
Applications. VDSS RDS(on) max. 30V. 3.2m. 36nC. Benefits. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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文件文字版本
PD - 96232 IRLB8743PbF HEXFET®
Applications
Power MOSFET l Optimized for UPS/Inverter Applications
VDSS RDS(on) max Qg
l High Frequency Synchronous Buck Converters for Computer Processor Power
30V 3.2m
Ω
36nC
l High Frequency Isolated DC-DC D Converters with Synchronous Rectification for Telecom and Industrial use S D G
Benefits
TO-220AB l Very Low RDS(on) at 4.5V VGS IRLB8743PbF l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
G D S
and Current Gate Drain Source l Lead-Free
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 150f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 78 IDM Pulsed Drain Current c 620 PD @TC = 25°C Maximum Power Dissipation h 140 W PD @TC = 100°C Maximum Power Dissipation h 68 Linear Derating Factor 0.90 W/°C TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screwi 10lbfxin (1.1Nxm)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case h ––– 1.11 RθCS Case-to-Sink, Flat Greased Surface 0.5 ––– °C/W RθJA Junction-to-Ambient g ––– 62 Notes through are on page 9 www.irf.com 1 04/22/09
Applications
Power MOSFET l Optimized for UPS/Inverter Applications
VDSS RDS(on) max Qg
l High Frequency Synchronous Buck Converters for Computer Processor Power
30V 3.2m
Ω
36nC
l High Frequency Isolated DC-DC D Converters with Synchronous Rectification for Telecom and Industrial use S D G
Benefits
TO-220AB l Very Low RDS(on) at 4.5V VGS IRLB8743PbF l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
G D S
and Current Gate Drain Source l Lead-Free
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 150f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 78 IDM Pulsed Drain Current c 620 PD @TC = 25°C Maximum Power Dissipation h 140 W PD @TC = 100°C Maximum Power Dissipation h 68 Linear Derating Factor 0.90 W/°C TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screwi 10lbfxin (1.1Nxm)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case h ––– 1.11 RθCS Case-to-Sink, Flat Greased Surface 0.5 ––– °C/W RθJA Junction-to-Ambient g ––– 62 Notes through are on page 9 www.irf.com 1 04/22/09