Datasheet IRLB8743PbF (Infineon) - 5
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 5 — Fig 9. Fig 10. Fig 11 |
| 修订版 | 01_01 |
| 文件格式/大小 | PDF / 282 Kb |
| 文件语言 | 英语 |
Fig 9. Fig 10. Fig 11
该数据表的模型线
文件文字版本
IRLB8743PbF 160 2.5 140 ) Limited By Package V( eg 120 a ) t 2.0 l A( o t V n 100 d e l r o r h u s C 80 er 1.5 n I i h D = 100µA a T r I D 60 et D = 250µA , a G ID = 1.0mA I D , 40 )h 1.0 t(S 20 GV 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200 TC , Case Temperature (°C) TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature Case Temperature 10 W/ C 1 ° ) D = 0.50 CJh 0.20 t Z 0.1 0.10 ( 0.05 e Ri (°C/W) τi (sec) s R R R R n 0.02 R 1 R 2 R 3 R 4 o 1 2 3 4 0.85073 0.006515 p τJ τ s 0.01 0.01 τ C J τ e 0.00562 8.246536 τ τ τ R 1 2 τ 3 τ 4 l 1 τ τ 2 τ 3 4 0.00099 6.148011 a m Ci= τi/Ri r Ci i/Ri 0.25266 0.000371 e 0.001 h SINGLE PULSE Notes: T ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature Case Temperature 10 W/ C 1 ° ) D = 0.50 CJh 0.20 t Z 0.1 0.10 ( 0.05 e Ri (°C/W) τi (sec) s R R R R n 0.02 R 1 R 2 R 3 R 4 o 1 2 3 4 0.85073 0.006515 p τJ τ s 0.01 0.01 τ C J τ e 0.00562 8.246536 τ τ τ R 1 2 τ 3 τ 4 l 1 τ τ 2 τ 3 4 0.00099 6.148011 a m Ci= τi/Ri r Ci i/Ri 0.25266 0.000371 e 0.001 h SINGLE PULSE Notes: T ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5