Datasheet Si1308EDL (Vishay) - 5

制造商Vishay
描述N-Channel 30 V (D-S) MOSFET
页数 / 页11 / 5 — Si1308EDL. TYPICAL CHARACTERISTICS. Current Derating*. Power, …
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Si1308EDL. TYPICAL CHARACTERISTICS. Current Derating*. Power, Junction-to-Case. Power, Junction-to-Ambient

Si1308EDL TYPICAL CHARACTERISTICS Current Derating* Power, Junction-to-Case Power, Junction-to-Ambient

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Si1308EDL
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1.8 1.35 ) (A rrent u 0.9 C n rai D - I D 0.45 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating*
0.6 0.45 0.5 0.36 0.4 0.27 0.3 Power (W) Power (W) 0.18 0.2 0.09 0.1 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A
Power, Junction-to-Case Power, Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-1997-Rev. C, 06-Oct-14
5
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