TSV782Electrical characteristicsTable 6. Electrical characteristics at VCC = 2.0 V, Vicm = VOUT = VCC / 2, T = 25 °C, CL = 47 pF and RL = 10 kΩ connectedto VCC / 2 (unless otherwise specified).SymbolParameterConditionsMin.Typ.Max.UnitDC performance Input offset voltage T = 25 °C ± 50 ± 200 Vio µV (Vicm = 0 V) -40 °C ≤ T ≤ 125 °C ± 700 ∆Vio/∆T Input offset voltage -40 °C ≤ T ≤ 125 °C ± 5 µV/°C temperature drift T = 25 °C 2 5 Iib Input bias current pA -40 °C ≤ T ≤ 125 °C 75 300 T = 25 °C 1 5 Iio Input offset current pA -40 °C ≤ T ≤ 125 °C 20 300 VCC- + 100 mV ≤ VOUT ≤ VCC+ - 100 mV, 95 120 T = 25 °C VCC- + 100 mV ≤ VOUT ≤ VCC+ - 100 mV, 85 107 -40 °C ≤ T ≤ 125 °C AVD Open loop gain dB VCC- + 300 mV ≤ VOUT ≤ VCC+ - 300 mV, 90 119 RL = 600 Ω, T = 25 °C VCC- + 300 mV ≤ VOUT ≤ VCC+ - 300 mV, 80 99 RL = 600 Ω, -40 °C ≤ T ≤ 125 °C Common-mode rejection ratio VCC- - 100 mV ≤ Vicm ≤ VCC+, T = 25°C 73 CMR dB 20.log (∆Vio/∆Vicm) VCC- - 100 mV ≤ Vicm ≤ VCC+, -40 °C ≤ T ≤ 125 °C 67 High level output voltage drop T = 25 °C 10 VOH mV (VOH = VCC+ - VOUT) -40 °C ≤ T ≤ 125 °C 20 Low level output voltage drop T = 25 °C 10 VOL mV (VOL = VOUT) -40 °C ≤ T ≤ 125 °C 20 RL connected to VCC+, T = 25 °C 45 51 ISINK RL connected to VCC+, -40 °C ≤ T ≤ 125 °C 32 IOUT mA RL connected to VCC-, T = 25 °C 45 56 ISOURCE RL connected to VCC-, -40 °C ≤ T ≤ 125 °C 38 Supply current (by operational T = 25 °C 3 3.4 ICC amplifier, V mA icm = 0 V) -40 °C ≤ T ≤ 125 °C 3.4 AC performance GBP Gain bandwidth product RL = 10 kΩ 23 30 MHz SR Slew rate RL = 10 kΩ, AV = 1 V/V, 10% to 90% 13 17 V/µs trec Overload recovery time VOUT 100 mV from rail, AV = +1 V/V 200 ns Total harmonic distortion + VIN = 1 Vpp, RL = 10 kΩ, AV = +1, f = 1 kHz, THD+N 0.004 % noise BW = 22 kHz Φm Phase margin 50 degrees GM Gain margin 9 dB f = 10 kHz 13 en Input voltage noise density nV/√Hz f = 1 kHz 35 DS14011 - Rev 2page 8/31 Document Outline Features Applications Description 1 Pin description 1.1 TSV782 dual operational amplifier 2 Absolute maximum ratings and operating conditions 3 Electrical characteristics 4 Typical performance characteristics 5 Application information 5.1 Operating voltages 5.2 Input offset voltage drift over the temperature 5.3 Long term input offset voltage drift 5.4 Unused channel 5.5 EMI rejection 5.6 Maximum power dissipation 5.7 Capacitive load and stability 5.8 Resistor values for high speed op amp design 5.9 PCB layout recommendations 5.10 Decoupling capacitor 5.11 Macromodel 6 Typical applications 6.1 Low-side current sensing 6.2 Photodiode transimpedance amplification 7 Package information 7.1 DFN8 2x2 package information 7.2 MiniSO8 package information 7.3 SO8 package information 8 Ordering information Revision history