Datasheet IRF1010N (International Rectifier)
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 8 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| 文件格式/大小 | PDF / 222 Kb |
| 文件语言 | 英语 |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
该数据表的模型线
文件文字版本
PD - 91278 IRF1010N HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 11mΩ G l Fast Switching l Fully Avalanche Rated ID = 85A S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A IDM Pulsed Drain Current 290 PD @TC = 25°C Power Dissipation 180 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 43 A EAR Repetitive Avalanche Energy 18 mJ dv/dt Peak Diode Recovery dv/dt 3.6 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.85 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 www.irf.com 1 3/16/01
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A IDM Pulsed Drain Current 290 PD @TC = 25°C Power Dissipation 180 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 43 A EAR Repetitive Avalanche Energy 18 mJ dv/dt Peak Diode Recovery dv/dt 3.6 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.85 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 www.irf.com 1 3/16/01