Datasheet IRF1010N (International Rectifier) - 2
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 8 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| 文件格式/大小 | PDF / 222 Kb |
| 文件语言 | 英语 |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRF1010N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 43A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 120 ID = 43A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 28V tr Rise Time ––– 76 ––– ID = 43A ns td(off) Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10 Between lead, D L ––– 4.5 ––– D Internal Drain Inductance 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 3210 ––– VGS = 0V Coss Output Capacitance ––– 690 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1030 250 mJ IAS = 4.3A, L = 270µH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 85 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 290 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V trr Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A Qrr Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD 43A, di/dt ≤ 210A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C Starting T Pulse width ≤ 400µs; duty cycle ≤ 2%. J = 25°C, L = 270µH R This is a typical value at device destruction and represents G = 25Ω, IAS = 43A, VGS=10V (See Figure 12) operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 43A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 120 ID = 43A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 28V tr Rise Time ––– 76 ––– ID = 43A ns td(off) Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10 Between lead, D L ––– 4.5 ––– D Internal Drain Inductance 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 3210 ––– VGS = 0V Coss Output Capacitance ––– 690 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1030 250 mJ IAS = 4.3A, L = 270µH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 85 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 290 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V trr Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A Qrr Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD 43A, di/dt ≤ 210A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C Starting T Pulse width ≤ 400µs; duty cycle ≤ 2%. J = 25°C, L = 270µH R This is a typical value at device destruction and represents G = 25Ω, IAS = 43A, VGS=10V (See Figure 12) operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 www.irf.com