Preliminary Datasheet EPC2305 (Efficient Power Conversion) - 4

eGaN® FET DATASHEET
EPC2305
Figure 6: Typical Output Charge and COSS Stored Energy Figure 7: Typical Gate Charge
200 10 5 160 I 8 4 D = 30 A V
µJ)
DS = 75 V 120 6 3
Stored Energy (
80 4
OSS
2
– Output charge (nC) — C – Gate-to-Source Voltage (V) Q OSS E OSS V GS
40 2 1 0 0 0 0 25 50 75 100 125 150 0 5 10 15 20 25
V QG – Gate Charge (nC) DS – Drain-to-Source Voltage (V) Figure 8: Typical Reverse Drain-Source Characteristics Figure 9: Typical Normalized On-State Resistance vs. Temp.
2.5 300 25˚C
DS(on)
125˚C 250 2.0 ID = 30 A VGS = 0 V VGS = 5 V 200 1.5 150
– Source-to-Drain Current (A)
100 1.0
I SD
50
Normalized On-State Resistance R
0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
Negative gate drive voltage increases the reverse drain-source voltage. EPC recommends 0 V for OFF
Figure 10: Typical Normalized Threshold Voltage vs. Temp. Figure 11: Safe Operating Area
1000 1.4 1.3 ID = 11 mA 100 Limited by RDS(on) 1.2 1.1 1.0 10 0.9
– Drain Current (A)
Pulse Width 0.8
I D
1 ms 1 100 ms
Normalized Threshold Voltage
10 ms 100 µs 0.7 1 ms 100 µs 10 µs 0.6 0.1 0 25 50 75 100 125 150 0.1 1 10 100 1000
TJ – Junction Temperature (°C) VDS – Drain-Source Voltage (V) T = Max Rated, T = +25°C, Single Pulse J C
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