Preliminary Datasheet EPC2305 (Efficient Power Conversion) - 3

eGaN® FET DATASHEET
EPC2305
Figure 1: Typical Output Characteristics at 25°C Figure 2: Typical Transfer Characteristics
300 300 250 25˚C 250 125˚C 200 VDS = 3 V DS = 6 V 200 150 150
– Drain Current (A) – Drain Current (A)
VGS = 5 V
I D
100 V
I D
GS = 4 V 100 VGS = 3 V 50 VGS = 2 V 50 0 0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 3: Typical RDS(on) vs. VGS for Various Drain Currents Figure 4: Typical RDS(on) vs. VGS for Various Temperatures
10 10
) Ω ) Ω
8 I 25˚C 8 D = 15 A 125˚C
ance (m
ID = 30 A I
ance (m
D = 45 A ID = 30 A 6 ID = 60 A 6
ce Resist ur ce Resist ur So So to-
4
to-
4
– Drain- – Drain-
2 2
R DS(on) R DS(on)
0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
3500 10000 3000 1000 2500 2000 COSS = CGD + CSD CISS = CGD + CGS 100 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 1500 C
Capacitance (pF)
RSS = CGD
Capacitance (pF)
1000 10 500 1 00 25 50 75 100 125 150 0 25 50 75 100 125 150
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
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