Preliminary Datasheet EPC2305 (Efficient Power Conversion) - 2
| 制造商 | Efficient Power Conversion |
| 描述 | Enhancement Mode Power Transistor |
| 页数 / 页 | 8 / 2 — eGaN® FET DATASHEET. Thermal Characteristics. PARAMETER. TYP. UNIT. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
eGaN® FET DATASHEET. Thermal Characteristics. PARAMETER. TYP. UNIT. Static Characteristics (TJ = 25°C unless otherwise stated)
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eGaN® FET DATASHEET
EPC2305
Thermal Characteristics PARAMETER TYP UNIT
RθJC Thermal Resistance, Junction-to-Case (Case TOP) 0.2 RθJB Thermal Resistance, Junction-to-Board (Case BOTTOM) 1.5 °C/W RθJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 45 RθJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC90142 EVB) 21
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = TBD mA 150 V IDSS Drain-Source Leakage VDS = 120 V, VGS = 0 V 0.002 Gate-to-Source Forward Leakage VGS = 5 V 0.016 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.7 Gate-to-Source Reverse Leakage VGS = -4 V 0.006 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 11 mA 0.7 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 30 A 2.2 mΩ VSD Source-to-Drain Forward Voltage# IS = 0.5 A, VGS = 0 V 1.4 V # Defined by design. Not subject to production test.
Dynamic Characteristics# (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance 2900 CRSS Reverse Transfer Capacitance VDS = 75 V, VGS = 0 V 7 COSS Output Capacitance 920 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 1) 1100 VDS = 0 to 75 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 2) 1400 RG Gate Resistance 0.5 Ω QG Total Gate Charge VDS = 75 V, VGS = 5 V, ID = 30 A 21 QGS Gate-to-Source Charge 6.3 QGD Gate-to-Drain Charge VDS = 75 V, ID = 30 A 2.6 nC QG(TH) Gate Charge at Threshold 4.4 QOSS Output Charge VDS = 75 V, VGS = 0 V 105 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. All measurements were done with substrate shorted to source. Note 1: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 2: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 2
EPC2305
Thermal Characteristics PARAMETER TYP UNIT
RθJC Thermal Resistance, Junction-to-Case (Case TOP) 0.2 RθJB Thermal Resistance, Junction-to-Board (Case BOTTOM) 1.5 °C/W RθJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 45 RθJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC90142 EVB) 21
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = TBD mA 150 V IDSS Drain-Source Leakage VDS = 120 V, VGS = 0 V 0.002 Gate-to-Source Forward Leakage VGS = 5 V 0.016 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.7 Gate-to-Source Reverse Leakage VGS = -4 V 0.006 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 11 mA 0.7 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 30 A 2.2 mΩ VSD Source-to-Drain Forward Voltage# IS = 0.5 A, VGS = 0 V 1.4 V # Defined by design. Not subject to production test.
Dynamic Characteristics# (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance 2900 CRSS Reverse Transfer Capacitance VDS = 75 V, VGS = 0 V 7 COSS Output Capacitance 920 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 1) 1100 VDS = 0 to 75 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 2) 1400 RG Gate Resistance 0.5 Ω QG Total Gate Charge VDS = 75 V, VGS = 5 V, ID = 30 A 21 QGS Gate-to-Source Charge 6.3 QGD Gate-to-Drain Charge VDS = 75 V, ID = 30 A 2.6 nC QG(TH) Gate Charge at Threshold 4.4 QOSS Output Charge VDS = 75 V, VGS = 0 V 105 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. All measurements were done with substrate shorted to source. Note 1: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 2: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 2