Datasheet PEMD12, PUMD12 (Nexperia) - 9
| 制造商 | Nexperia |
| 描述 | NPN/PNP Resistor-Equipped Transistors; R1 = 47 kΩ, R2 = 47 kΩ |
| 页数 / 页 | 17 / 9 — NXP Semiconductors. PEMD12; PUMD12. NPN/PNP resistor-equipped … |
| 修订版 | 12102022 |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
NXP Semiconductors. PEMD12; PUMD12. NPN/PNP resistor-equipped transistors; R1 = 47 k. , R2 = 47 k. Fig 8
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NXP Semiconductors PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 k , R2 = 47 k
006aac756 006aac757 2.0 103 Cc (pF) 1.6 fT (MHz) 1.2 102 0.8 0.4 0.0 10 0 10 20 30 40 50 10-1 1 102 10 VCB (V) IC (mA) f = 1 MHz; Tamb = 25 C VCE = 5 V; Tamb = 25 C
Fig 8. TR1 (NPN): Collector capacitance as a function Fig 9. TR1 (NPN): Transition frequency as a function of collector-base voltage; typical values of collector current; typical values of built-in transistor
006aac758 006aac759 103 -1 hFE (1) (2) VCEsat (3) (V) 102 -10-1 (1) 10 (2) (3) 1 -10-2 -10-1 -1 -102 -10 -10-1 -1 -102 -10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C
Fig 10. TR2 (PNP): DC current gain as a function of Fig 11. TR2 (PNP): Collector-emitter saturation collector current; typical values voltage as a function of collector current; typical values
PEMD12_PUMD12 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 21 November 2011 8 of 16
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
006aac756 006aac757 2.0 103 Cc (pF) 1.6 fT (MHz) 1.2 102 0.8 0.4 0.0 10 0 10 20 30 40 50 10-1 1 102 10 VCB (V) IC (mA) f = 1 MHz; Tamb = 25 C VCE = 5 V; Tamb = 25 C
Fig 8. TR1 (NPN): Collector capacitance as a function Fig 9. TR1 (NPN): Transition frequency as a function of collector-base voltage; typical values of collector current; typical values of built-in transistor
006aac758 006aac759 103 -1 hFE (1) (2) VCEsat (3) (V) 102 -10-1 (1) 10 (2) (3) 1 -10-2 -10-1 -1 -102 -10 -10-1 -1 -102 -10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C
Fig 10. TR2 (PNP): DC current gain as a function of Fig 11. TR2 (PNP): Collector-emitter saturation collector current; typical values voltage as a function of collector current; typical values
PEMD12_PUMD12 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 21 November 2011 8 of 16
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents