Datasheet IRFP9140 (Vishay)
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 11 / 1 — IRFP9140. Power MOSFET. TO-247AC. FEATURES. PRODUCT SUMMARY. Note. … |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
IRFP9140. Power MOSFET. TO-247AC. FEATURES. PRODUCT SUMMARY. Note. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
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文件文字版本
IRFP9140
www.vishay.com Vishay Siliconix
Power MOSFET
S
TO-247AC FEATURES
• Dynamic dV/dt rating • Repetitive avalanche rated G • P-channel Available • Isolated central mounting hole S • 175 °C operating temperature D G • Fast switching D • Ease of paralleling P-Channel MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY Note
* This datasheet provides information about parts that are V DS (V) -100 RoHS-compliant and / or parts that are non RoHS-compliant. For RDS(on) (Ω) VGS = -10 V 0.20 example, parts with lead (Pb) terminations are not RoHS-compliant. Qg (max.) (nC) 61 Please see the information / tables in this datasheet for details Qgs (nC) 14
DESCRIPTION
Qgd (nC) 29 Third generation Power MOSFETs from Vishay provide the Configuration Single designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP9140PbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -100 V Gate-source voltage VGS ± 20 TC = 25 °C -21 Continuous drain current VGS at - 10 V ID T A C = 100 °C -15 Pulsed drain current a IDM -84 Linear derating factor 1.2 W/°C Single pulse avalanche energy b EAS 960 mJ Repetitive avalanche current a IAR -21 A Repetitive avalanche energy a EAR 18 mJ Maximum power dissipation TC = 25 °C PD 180 W Peak diode recovery dV/dt c dV/dt -5.5 V/ns Operating junction and storage temperature range TJ, Tstg -5 to +175 °C Soldering recommendations (peak temperature) for 10 s 300 d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = - 25 V, starting TJ = 25 °C, L = 3.3 mH, Rg = 25 Ω, IAS = - 21 A (see fig. 12) c. ISD ≤ - 21 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S22-0058-Rev. C, 31-Jan-2022
1
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
S
TO-247AC FEATURES
• Dynamic dV/dt rating • Repetitive avalanche rated G • P-channel Available • Isolated central mounting hole S • 175 °C operating temperature D G • Fast switching D • Ease of paralleling P-Channel MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY Note
* This datasheet provides information about parts that are V DS (V) -100 RoHS-compliant and / or parts that are non RoHS-compliant. For RDS(on) (Ω) VGS = -10 V 0.20 example, parts with lead (Pb) terminations are not RoHS-compliant. Qg (max.) (nC) 61 Please see the information / tables in this datasheet for details Qgs (nC) 14
DESCRIPTION
Qgd (nC) 29 Third generation Power MOSFETs from Vishay provide the Configuration Single designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP9140PbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -100 V Gate-source voltage VGS ± 20 TC = 25 °C -21 Continuous drain current VGS at - 10 V ID T A C = 100 °C -15 Pulsed drain current a IDM -84 Linear derating factor 1.2 W/°C Single pulse avalanche energy b EAS 960 mJ Repetitive avalanche current a IAR -21 A Repetitive avalanche energy a EAR 18 mJ Maximum power dissipation TC = 25 °C PD 180 W Peak diode recovery dV/dt c dV/dt -5.5 V/ns Operating junction and storage temperature range TJ, Tstg -5 to +175 °C Soldering recommendations (peak temperature) for 10 s 300 d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = - 25 V, starting TJ = 25 °C, L = 3.3 mH, Rg = 25 Ω, IAS = - 21 A (see fig. 12) c. ISD ≤ - 21 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S22-0058-Rev. C, 31-Jan-2022
1
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000