Datasheet IRFP9140 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 11 / 2 — IRFP9140. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
IRFP9140. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static
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文件文字版本
IRFP9140
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.087 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = -100 V, VGS = 0 V - - -100 Zero gate voltage drain current IDSS μA VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500 Drain-source on-state resistance RDS(on) VGS = -10 V ID = - 13 Ab - - 0.20 Ω Forward transconductance gfs VDS = -50 V, ID = - 13 Ab 6.2 - - S
Dynamic
Input capacitance Ciss V - 1400 - GS = 0 V, Output capacitance Coss VDS = - 25 V, - 590 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 140 - Total gate charge Qg - - 61 I Gate-source charge Qgs V D = - 19 A, VDS = -80 V, GS = -10 V - - 14 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 29 Turn-on delay time td(on) - 16 - Rise time tr V - 73 - DD = - 50 V, ID = -19 A, ns R Turn-off delay time t g = 9.1 Ω, RD = 2.4 Ω, see fig. 10 b d(off) - 34 - Fall time tf - 57 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance L G S - 13 - die contact S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol D - - - 21 showing the A integral reverse Pulsed diode forward current a I G SM - - - 84 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = - 21 A, VGS = 0 V b - - - 5.0 V Body diode reverse recovery time trr - 130 260 ns TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.35 0.70 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. S22-0058-Rev. C, 31-Jan-2022
2
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.087 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = -100 V, VGS = 0 V - - -100 Zero gate voltage drain current IDSS μA VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500 Drain-source on-state resistance RDS(on) VGS = -10 V ID = - 13 Ab - - 0.20 Ω Forward transconductance gfs VDS = -50 V, ID = - 13 Ab 6.2 - - S
Dynamic
Input capacitance Ciss V - 1400 - GS = 0 V, Output capacitance Coss VDS = - 25 V, - 590 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 140 - Total gate charge Qg - - 61 I Gate-source charge Qgs V D = - 19 A, VDS = -80 V, GS = -10 V - - 14 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 29 Turn-on delay time td(on) - 16 - Rise time tr V - 73 - DD = - 50 V, ID = -19 A, ns R Turn-off delay time t g = 9.1 Ω, RD = 2.4 Ω, see fig. 10 b d(off) - 34 - Fall time tf - 57 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance L G S - 13 - die contact S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol D - - - 21 showing the A integral reverse Pulsed diode forward current a I G SM - - - 84 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = - 21 A, VGS = 0 V b - - - 5.0 V Body diode reverse recovery time trr - 130 260 ns TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.35 0.70 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. S22-0058-Rev. C, 31-Jan-2022
2
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000