Datasheet ALD1107, ALD1117 (Advanced Linear Devices) - 2
| 制造商 | Advanced Linear Devices |
| 描述 | Quad/Dual P-channel Matched Pair Mosfet Array |
| 页数 / 页 | 9 / 2 — ABSOLUTE MAXIMUM RATINGS. CAUTION: ESD Sensitive Device. Use static … |
| 文件格式/大小 | PDF / 86 Kb |
| 文件语言 | 英语 |
ABSOLUTE MAXIMUM RATINGS. CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS -10V Gate-source voltage, VGS -10V Power dissipation 500mW Operating temperature range SAL, PAL, SBL, PBL packages 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS TA = 25
°
C unless otherwise specified ALD1107 ALD1117 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Gate Threshold VT -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 V IDS = -1.0µA VGS = VDS Voltage Offset Voltage VOS 2 10 2 10 mV IDS = -10µA VGS = VDS VGS1-VGS2 Gate Threshold Temperature TCVT -1.3 -1.3 mV/°C Drift 2 On Drain IDS(ON) -1.3 -2 -1.3 -2 mA VGS = VDS = -5V Current Transconductance GIS 0.25 0.67 0.25 0.67 mmho VDS = -5V IDS = -10mA Mismatch ∆Gfs 0.5 0.5 % Output GOS 40 40 µmho VDS = -5V IDS = -10mA Conductance Drain Source RDS(ON) 1200 1800 1200 1800 Ω VDS = -0.1V VGS = -5V On Resistance Drain Source On Resistence ∆DS(ON) 0.5 0.5 % VDS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BVDSS -10 -10 V IDS = -1.0µA VGS = 0V Voltage Off Drain IDS(OFF) 10 400 10 400 pA VDS = -10V VGS = 0V Current 1 4 4 nA TA = 125°C Gate Leakage IGSS 1 100 1 100 pA VDS = 0V VGS = -10V Current 1 1 nA TA = 125°C Input CISS 1 3 1 3 pF Capacitance 2 Notes: 1 Consists of junction leakage currents 2 Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices 2 of 9
Drain-source voltage, VDS -10V Gate-source voltage, VGS -10V Power dissipation 500mW Operating temperature range SAL, PAL, SBL, PBL packages 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS TA = 25
°
C unless otherwise specified ALD1107 ALD1117 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Gate Threshold VT -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 V IDS = -1.0µA VGS = VDS Voltage Offset Voltage VOS 2 10 2 10 mV IDS = -10µA VGS = VDS VGS1-VGS2 Gate Threshold Temperature TCVT -1.3 -1.3 mV/°C Drift 2 On Drain IDS(ON) -1.3 -2 -1.3 -2 mA VGS = VDS = -5V Current Transconductance GIS 0.25 0.67 0.25 0.67 mmho VDS = -5V IDS = -10mA Mismatch ∆Gfs 0.5 0.5 % Output GOS 40 40 µmho VDS = -5V IDS = -10mA Conductance Drain Source RDS(ON) 1200 1800 1200 1800 Ω VDS = -0.1V VGS = -5V On Resistance Drain Source On Resistence ∆DS(ON) 0.5 0.5 % VDS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BVDSS -10 -10 V IDS = -1.0µA VGS = 0V Voltage Off Drain IDS(OFF) 10 400 10 400 pA VDS = -10V VGS = 0V Current 1 4 4 nA TA = 125°C Gate Leakage IGSS 1 100 1 100 pA VDS = 0V VGS = -10V Current 1 1 nA TA = 125°C Input CISS 1 3 1 3 pF Capacitance 2 Notes: 1 Consists of junction leakage currents 2 Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices 2 of 9