Datasheet L272 (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | Dual Power Operational Amplifiers |
| 页数 / 页 | 10 / 3 — L272. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Value. Unit. THERMAL … |
| 文件格式/大小 | PDF / 913 Kb |
| 文件语言 | 英语 |
L272. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Value. Unit. THERMAL DATA. Powerdip. SO16. Minidip. ELECTRICAL CHARACTERISTICS
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L272 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
Vs Supply Voltage 28 V Vi Input Voltage Vs Vi Differential Input Voltage ± Vs Io DC Output Current 1 A Ip Peak Output Current (non repetitive) 1.5 A Ptot Power Dissipation at: Tamb = 80°C (L272), Tamb = 50°C (L272M), Tcase = 90 °C (L272D) 1.2 W T 5 W case = 75 °C (L272) Top Operating Temperature Range (L272D) – 40 to 85 °C Tstg, Tj Storage and Junction Temperature – 40 to 150 °C
THERMAL DATA Symbol Parameter Powerdip SO16 Minidip Unit
Rth j-case Thermal Resistance Junction-pins Max. 15 – * 70 oC/W Rth j-amb Thermal Resistance Junction-ambient Max. 70 – 100 oC/W Rth j-alumina Thermal Resistance Junction-alumina Max. – ** 50 – oC/W * Thermal resistance junction-pin 4 ** Thermal resistance junctions-pins with the chip soldered on the middle of an alumina supporting substrate measuring 15x 20mm; 0.65mm thickness and infinite heatsink.
ELECTRICAL CHARACTERISTICS
(VS = 24V, Tamb = 25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Vs Supply Voltage 4 28 V VS Is Quiescent Drain Current VO = Vs = 24V 8 12 mA 2 Vs = 12V 7.5 11 mA Ib Input Bias Current 0.3 2.5 µA Vos Input Offset Voltage 15 60 mV Ios Input Offset Current 50 250 nA SR Slew Rate 1 V/µs B Gain-bandwidth Product 350 kHz Ri Input Resistance 500 kΩ Gv O. L. Voltage Gain f = 100Hz 60 70 dB f = 1kHz 50 dB eN Input Noise Voltage B = 20kHz 10 µV IN Input Noise Current B = 20kHz 200 pA CRR Common Mode Rejection f = 1kHz 60 75 dB SVR Supply Voltage Rejection f = 100Hz, RG = 10kΩ, VR = 0.5V dB Vs = 24V 70 Vs = ± 12V 54 62 Vs = ± 6V 56 Vo Output Voltage Swing Ip = 0.1A 23 V Ip = 0.5A 21 22.5 V Cs Channel Separation f = 1 kHz; RL =10Ω, Gv = 30dB dB Vs = 24V 60 Vs = ± 6V 60 d Distortion f = 1kHz, Gv = 3 dB, Vs = 24V, RL = ∞ 0.5 % Tsd Thermal Shutdown Junction 145 °C Temperature 3/10
Vs Supply Voltage 28 V Vi Input Voltage Vs Vi Differential Input Voltage ± Vs Io DC Output Current 1 A Ip Peak Output Current (non repetitive) 1.5 A Ptot Power Dissipation at: Tamb = 80°C (L272), Tamb = 50°C (L272M), Tcase = 90 °C (L272D) 1.2 W T 5 W case = 75 °C (L272) Top Operating Temperature Range (L272D) – 40 to 85 °C Tstg, Tj Storage and Junction Temperature – 40 to 150 °C
THERMAL DATA Symbol Parameter Powerdip SO16 Minidip Unit
Rth j-case Thermal Resistance Junction-pins Max. 15 – * 70 oC/W Rth j-amb Thermal Resistance Junction-ambient Max. 70 – 100 oC/W Rth j-alumina Thermal Resistance Junction-alumina Max. – ** 50 – oC/W * Thermal resistance junction-pin 4 ** Thermal resistance junctions-pins with the chip soldered on the middle of an alumina supporting substrate measuring 15x 20mm; 0.65mm thickness and infinite heatsink.
ELECTRICAL CHARACTERISTICS
(VS = 24V, Tamb = 25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Vs Supply Voltage 4 28 V VS Is Quiescent Drain Current VO = Vs = 24V 8 12 mA 2 Vs = 12V 7.5 11 mA Ib Input Bias Current 0.3 2.5 µA Vos Input Offset Voltage 15 60 mV Ios Input Offset Current 50 250 nA SR Slew Rate 1 V/µs B Gain-bandwidth Product 350 kHz Ri Input Resistance 500 kΩ Gv O. L. Voltage Gain f = 100Hz 60 70 dB f = 1kHz 50 dB eN Input Noise Voltage B = 20kHz 10 µV IN Input Noise Current B = 20kHz 200 pA CRR Common Mode Rejection f = 1kHz 60 75 dB SVR Supply Voltage Rejection f = 100Hz, RG = 10kΩ, VR = 0.5V dB Vs = 24V 70 Vs = ± 12V 54 62 Vs = ± 6V 56 Vo Output Voltage Swing Ip = 0.1A 23 V Ip = 0.5A 21 22.5 V Cs Channel Separation f = 1 kHz; RL =10Ω, Gv = 30dB dB Vs = 24V 60 Vs = ± 6V 60 d Distortion f = 1kHz, Gv = 3 dB, Vs = 24V, RL = ∞ 0.5 % Tsd Thermal Shutdown Junction 145 °C Temperature 3/10