MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETERTEST CONDITIONSSYMBOL MB2SMB4SMB6SUNIT Maximum instantaneous forward I voltage per diode F = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode R TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETERSYMBOL MB2SMB4SMB6SUNIT RJA (1) 85 Typical thermal resistance R (2) JA 70 °C/W RJL (1) 20 Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/NUNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODE MB2S-E3/45 0.22 45 100 Tube MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel Revision: 04-Aug-2020 2 Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000