Datasheet BSS84 (Diodes) - 2

BSS84 Marking Information
K84 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M or M = Month (ex: 9 = September) Date Code Key
Year 1998 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code
J …… I J K L M N O P R S
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code
1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS ≤ 20kΩ VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 5) Continuous ID -130 mA Pulsed Drain Current IDM -1.2 A
Thermal Characteristics
(@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -50   V VGS = 0V, ID = -250µA   -1 µA VDS = -50V, VGS = 0V, TJ = +25°C Zero Gate Voltage Drain Current IDSS   -2 µA VDS = -50V, VGS = 0V, TJ = +125°C   -100 nA VDS = -25V, VGS = 0V, TJ = +25°C Gate-Body Leakage IGSS   ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) -0.8  -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS(on)  3.2 10 Ω VGS = -5V, ID = -0.100A Forward Transconductance gFS 0.05   S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss  24.6 45 pF Output Capacitance Coss  4.7 25 pF VDS = -25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss  2.8 12 pF Gate Resistance Rg  916  Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg  0.28  nC Total Gate Charge (VGS = -10V) Qg  0.59  nC VDS = -10V, ID = -0.1A Gate-Source Charge Qgs  0.09  nC Gate-Drain Charge Qgd  0.08  nC Turn-On Delay Time tD(on)  10  ns VDD = -30V, ID = -0.27A, Turn-Off Delay Time tD(off)  18  ns RGEN = 50Ω, VGS = -10V Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. BSS84 2 of 6 August 2021 Document number: DS30149 Rev. 25 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features and Benefits Product Summary Description and Applications Mechanical Data Marking Information Package Outline Dimensions Suggested Pad Layout