Datasheet BSS84 (Diodes) - 3
| 制造商 | Diodes |
| 描述 | P-Channel Enhancement Mode MOSFET |
| 页数 / 页 | 6 / 3 — BSS84. www.diodes.com |
| 文件格式/大小 | PDF / 411 Kb |
| 文件语言 | 英语 |
BSS84. www.diodes.com
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文件文字版本
BSS84
400 -600 350 ) A -500 W 300 T (m (m N N E R -400 250 R U PATIOI C S 200 E IS -300 C D R R U E 150 O W -S -200 O IN 100 A , P R P D , D D -100 50 I 0 0 0 25 50 75 100 125 150 175 200 0 -1 -2 -3 -4 -5 T , AMBIENT TEMPERATURE (° ( C ° ) A C V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Max Power Dissipation vs. Ambient Te mperature Fig. 2 Drain-Source Current vs. Drain-Source Voltage -1.0 10 E 9 C -0.8 R U 8 O ) -S ) 7 Ω T (A IN A ( N -0.6 E E R C 6 R D N R U TA 5 ZED -C LI IS -0.4 S IN A E 4 A M R R -R O N , D 3 O I D , N ) -0.2 N 2 (O S TA = 125 C ° R D 1 T = 25 C ° 0.0 0 A 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -1 -2 -3 -4 -5 V , GATE-SOURCE VOLTAGE (V) GS V , GATE-SOURCE (V) GS Fig. 3 Drain-Current vs. Gate-Source Voltage Fig. 4 On-Resistance vs. Gate-Source Voltage 15 25.0 V = -10V GS I = -0.13A D ) 12 ) 20.0 Ω Ω ( E E C C N N TA 9 TA 15.0 IS IS S S E E -R -R N 6 N 10.0 , O , O ) N N (O (O S S D R D 3 R 5.0 0 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 T , JUNCTION TEMPERATURE ((°C) J C) I , DRAIN-CURRENT (A) D Fig. 5 On-Resistance vs. Junction Temper ature Fig. 6 On-Resistance vs. Drain-Current BSS84 3 of 6 August 2021 Document number: DS30149 Rev. 25 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features and Benefits Product Summary Description and Applications Mechanical Data Marking Information Package Outline Dimensions Suggested Pad Layout
400 -600 350 ) A -500 W 300 T (m (m N N E R -400 250 R U PATIOI C S 200 E IS -300 C D R R U E 150 O W -S -200 O IN 100 A , P R P D , D D -100 50 I 0 0 0 25 50 75 100 125 150 175 200 0 -1 -2 -3 -4 -5 T , AMBIENT TEMPERATURE (° ( C ° ) A C V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Max Power Dissipation vs. Ambient Te mperature Fig. 2 Drain-Source Current vs. Drain-Source Voltage -1.0 10 E 9 C -0.8 R U 8 O ) -S ) 7 Ω T (A IN A ( N -0.6 E E R C 6 R D N R U TA 5 ZED -C LI IS -0.4 S IN A E 4 A M R R -R O N , D 3 O I D , N ) -0.2 N 2 (O S TA = 125 C ° R D 1 T = 25 C ° 0.0 0 A 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -1 -2 -3 -4 -5 V , GATE-SOURCE VOLTAGE (V) GS V , GATE-SOURCE (V) GS Fig. 3 Drain-Current vs. Gate-Source Voltage Fig. 4 On-Resistance vs. Gate-Source Voltage 15 25.0 V = -10V GS I = -0.13A D ) 12 ) 20.0 Ω Ω ( E E C C N N TA 9 TA 15.0 IS IS S S E E -R -R N 6 N 10.0 , O , O ) N N (O (O S S D R D 3 R 5.0 0 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 T , JUNCTION TEMPERATURE ((°C) J C) I , DRAIN-CURRENT (A) D Fig. 5 On-Resistance vs. Junction Temper ature Fig. 6 On-Resistance vs. Drain-Current BSS84 3 of 6 August 2021 Document number: DS30149 Rev. 25 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features and Benefits Product Summary Description and Applications Mechanical Data Marking Information Package Outline Dimensions Suggested Pad Layout