Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 8
| 制造商 | NXP |
| 描述 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 页数 / 页 | 16 / 8 — Zsource. Zload. MHz. Z source. Z load. Figure 13. Series Equivalent … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
Zsource. Zload. MHz. Z source. Z load. Figure 13. Series Equivalent Source and Load Impedance. MRF8P29300HR6 MRF8P29300HSR6
该数据表的模型线
MRF8P29300H
MRF8P29300HS
文件文字版本
Zo = 10 Ω f = 2900 MHz f = 2900 MHz f = 2700 MHz Zload Zsource f = 2700 MHz VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak
f Zsource Zload MHz
Ω Ω 2700 4.7 - j2.0 7.8 - j1.0 2800 4.7 - j1.7 8.7 - j0.2 2900 4.7 - j1.5 9.4 - j0.7 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Device Output Matching + Under - Matching Network Test Network - +
Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 8 Freescale Semiconductor
f Zsource Zload MHz
Ω Ω 2700 4.7 - j2.0 7.8 - j1.0 2800 4.7 - j1.7 8.7 - j0.2 2900 4.7 - j1.5 9.4 - j0.7 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Device Output Matching + Under - Matching Network Test Network - +
Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 8 Freescale Semiconductor