Datasheet BCV62 (Nexperia) - 4

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Nexperia BCV62 PNP general-purpose double transistors Table 8. Characteristics
…continued Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V [1] BEsat base-emitter IC = −10 mA; - −700 - mV saturation voltage IB = −0.5 mA I [1] C = −100 mA; - −850 - mV IB = −5 mA VBE base-emitter voltage IC = −2 mA; VCE = −5 V [2] −600 −650 −750 mV IC = −10 mA; VCE = −5 V [2] - - −820 mV fT transition frequency VCE = −5 V; 100 - - MHz IC = −10 mA; f = 100 MHz Cc collector capacitance VCB = −10 V; - 4.5 - pF IE = ie = 0 A NF noise figure VCE = −5 V; - - 10 dB IC = −200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS emitter-base voltage VCB = 0 V; IE = −250 mA - - −1.5 V VCB = 0 V; IE = −10 μA −400 - - mV hFE DC current gain VCE = −5 V; IC = −2 mA BCV62 100 - 800 BCV62A 100 - 250 BCV62B 220 - 475 BCV62C 420 - 800
Transistors TR1 and TR2
IC1/IE2 current matching IE2 = −0.5 mA; VCE1 = −5 V; T ≤ amb 25 °C 0.7 - 1.3 T ≤ amb 150 °C 0.7 - 1.3 IE2 emitter current 2 VCE1 = −5 V [3] - - −5 mA [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] Device, without emitter resistors, mounted on an FR4 PCB. BCV62 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 4 — 26 July 2010 4 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents