Datasheet DMP2160UWQ (Diodes) - 2
| 制造商 | Diodes |
| 描述 | P-Channel Enhancement Mode Mosfet |
| 页数 / 页 | 6 / 2 — DMP2160UWQ. Maximum Ratings. Characteristic. Symbol. Value. Units. … |
| 文件格式/大小 | PDF / 486 Kb |
| 文件语言 | 英语 |
DMP2160UWQ. Maximum Ratings. Characteristic. Symbol. Value. Units. Thermal Characteristics. Electrical Characteristics. Min. Typ. Max. Unit
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文件文字版本
DMP2160UWQ Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±10 V T -1.5 Drain Current (Note 6) Steady State A = +25°C ID A T -1.2 A = +70°C Pulsed Drain Current IDM -10 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) PD 350 mW Thermal Resistance, Junction to Ambient RθJA 360 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
(Note 7) Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS 1 μA VDS = -20V, VGS = 0V ±100 V Gate-Source Leakage GS = 8V, VDS = 0V IGSS nA ±800 VGS = 10V, VDS = 0V
ON CHARACTERISTICS
(Note 7) Gate Threshold Voltage VGS(th) -0.4 -0.6 -0.9 V VDS = VGS, ID = -250μA 75 100 V Static Drain-Source On-Resistance GS = -4.5V, ID = -1.5A RDS(ON) mΩ 90 120 VGS = -2.5V, ID = -1.2A Forward Transconductance gFS — 4 — S VDS =-10V, ID = -1.5A Diode Forward Voltage (Note 8) VSD — -1.0 V VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS
(Note 8) Input Capacitance CISS 627 — pF VDS = -10V, VGS = 0V Output Capacitance COSS 64 — pF f = 1.0MHz Reverse Transfer Capacitance CRSS 53 — pF Notes: 6.Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP2160UWQ 2 of 6 December 2017 Document number: DS40105 Rev. 2 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±10 V T -1.5 Drain Current (Note 6) Steady State A = +25°C ID A T -1.2 A = +70°C Pulsed Drain Current IDM -10 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) PD 350 mW Thermal Resistance, Junction to Ambient RθJA 360 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
(Note 7) Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS 1 μA VDS = -20V, VGS = 0V ±100 V Gate-Source Leakage GS = 8V, VDS = 0V IGSS nA ±800 VGS = 10V, VDS = 0V
ON CHARACTERISTICS
(Note 7) Gate Threshold Voltage VGS(th) -0.4 -0.6 -0.9 V VDS = VGS, ID = -250μA 75 100 V Static Drain-Source On-Resistance GS = -4.5V, ID = -1.5A RDS(ON) mΩ 90 120 VGS = -2.5V, ID = -1.2A Forward Transconductance gFS — 4 — S VDS =-10V, ID = -1.5A Diode Forward Voltage (Note 8) VSD — -1.0 V VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS
(Note 8) Input Capacitance CISS 627 — pF VDS = -10V, VGS = 0V Output Capacitance COSS 64 — pF f = 1.0MHz Reverse Transfer Capacitance CRSS 53 — pF Notes: 6.Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP2160UWQ 2 of 6 December 2017 Document number: DS40105 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated