Datasheet EPC2361 (Efficient Power Conversion) - 3
| 制造商 | Efficient Power Conversion |
| 描述 | Enhancement Mode Power Transistor |
| 页数 / 页 | 10 / 3 — eGaN® FET DATASHEET. Figure 5a: Typical Capacitance (Linear Scale). … |
| 文件格式/大小 | PDF / 1.9 Mb |
| 文件语言 | 英语 |
eGaN® FET DATASHEET. Figure 5a: Typical Capacitance (Linear Scale). Figure 5b: Typical Capacitance (Log Scale)
该数据表的模型线
文件文字版本
eGaN® FET DATASHEET
EPC2361
Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
4500 10000 3750 3000 1000 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 2250 COSS = CGD + CSD CISS = CGD + CGS
Capacitance (pF) Capacitance (pF)
1500 100 CRSS = CGD 750 10 00 25 50 75 100 0 25 50 75 100
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Typical Output Charge and COSS Stored Energy Figure 7: Typical Gate Charge
150 5 5 120 4 I 4 D = 50 A V
µJ)
DS = 50 V 90 3 3
Stored Energy (
60 2
OSS
2
– Output charge (nC) — C – Gate-to-Source Voltage (V) Q OSS E OSS
30 1
V GS
1 0 0 0 0 25 50 75 100 0 5 10 15 20 25 30
V QG – Gate Charge (nC) DS – Drain-to-Source Voltage (V) Figure 8: Reverse Drain-Source Characteristics Figure 9: Normalized On-State Resistance vs. Temperature
2.5 500 25˚C
DS(on)
125˚C 400 ID = 50 A 2.0 VGS = 0 V VGS = 5 V 300 1.5 200
– Source-to-Drain Current (A)
1.0
I SD
100
Normalized On-State Resistance R
0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C) Note:
Negative gate drive voltage increases the reverse drain-source voltage. EPC recommends 0 V for OFF. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2024 | For more information:
info@epc-co.com
| 3
EPC2361
Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
4500 10000 3750 3000 1000 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 2250 COSS = CGD + CSD CISS = CGD + CGS
Capacitance (pF) Capacitance (pF)
1500 100 CRSS = CGD 750 10 00 25 50 75 100 0 25 50 75 100
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Typical Output Charge and COSS Stored Energy Figure 7: Typical Gate Charge
150 5 5 120 4 I 4 D = 50 A V
µJ)
DS = 50 V 90 3 3
Stored Energy (
60 2
OSS
2
– Output charge (nC) — C – Gate-to-Source Voltage (V) Q OSS E OSS
30 1
V GS
1 0 0 0 0 25 50 75 100 0 5 10 15 20 25 30
V QG – Gate Charge (nC) DS – Drain-to-Source Voltage (V) Figure 8: Reverse Drain-Source Characteristics Figure 9: Normalized On-State Resistance vs. Temperature
2.5 500 25˚C
DS(on)
125˚C 400 ID = 50 A 2.0 VGS = 0 V VGS = 5 V 300 1.5 200
– Source-to-Drain Current (A)
1.0
I SD
100
Normalized On-State Resistance R
0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C) Note:
Negative gate drive voltage increases the reverse drain-source voltage. EPC recommends 0 V for OFF. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2024 | For more information:
info@epc-co.com
| 3