Datasheet BC807 (Nexperia)
| 制造商 | Nexperia |
| 描述 | 45 V, 500 mA PNP General-Purpose Transistors |
| 页数 / 页 | 13 / 1 — BC807 series. 45 V, 500 mA PNP general-purpose transistors. Rev. 8 — 1 … |
| 修订版 | 30062022 |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
BC807 series. 45 V, 500 mA PNP general-purpose transistors. Rev. 8 — 1 July 2022. Product data sheet. 1. General description
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BC807 series 45 V, 500 mA PNP general-purpose transistors Rev. 8 — 1 July 2022 Product data sheet 1. General description
PNP general-purpose transistor in a smal SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number Package NPN complement Nexperia JEDEC JEITA
BC807 SOT23 TO-236AB - BC817 BC807-16 BC817-16 BC807-25 BC817-25 BC807-40 BC817-40
2. Features and benefits
• High current • Three current gain selections
3. Applications
• General-purpose switching and amplification
4. Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base; Tamb = 25 °C - - -45 V IC collector current Tamb = 25 °C - - -500 mA ICM peak collector current single pulse; tp ≤ 1 ms; Tamb = 25 °C - - -1 A hFE DC current gain BC807 VCE = -1 V; IC = -100 mA Tamb = 25 °C [1] 100 - 600 BC807-16 [1] 100 - 250 BC807-25 [1] 160 - 400 BC807-40 [1] 250 - 600 [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
BC807 series 45 V, 500 mA PNP general-purpose transistors Rev. 8 — 1 July 2022 Product data sheet 1. General description
PNP general-purpose transistor in a smal SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number Package NPN complement Nexperia JEDEC JEITA
BC807 SOT23 TO-236AB - BC817 BC807-16 BC817-16 BC807-25 BC817-25 BC807-40 BC817-40
2. Features and benefits
• High current • Three current gain selections
3. Applications
• General-purpose switching and amplification
4. Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base; Tamb = 25 °C - - -45 V IC collector current Tamb = 25 °C - - -500 mA ICM peak collector current single pulse; tp ≤ 1 ms; Tamb = 25 °C - - -1 A hFE DC current gain BC807 VCE = -1 V; IC = -100 mA Tamb = 25 °C [1] 100 - 600 BC807-16 [1] 100 - 250 BC807-25 [1] 160 - 400 BC807-40 [1] 250 - 600 [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents