Datasheet BC817 (Nexperia) - 8
| 制造商 | Nexperia |
| 描述 | 45 V, 500 mA NPN General-Purpose Transistors |
| 页数 / 页 | 13 / 8 — Nexperia. BC817 series. 45 V, 500 mA NPN general-purpose transistors. … |
| 修订版 | 30062022 |
| 文件格式/大小 | PDF / 316 Kb |
| 文件语言 | 英语 |
Nexperia. BC817 series. 45 V, 500 mA NPN general-purpose transistors. Fig. 12. BC817-40: DC current gain as a function of
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Nexperia BC817 series 45 V, 500 mA NPN general-purpose transistors
006aaa133 800 006aaa136 10 hFE V 600 (1) BEsat (V) 400 (2) 1 (1) (2) (3) 200 (3) 0 10- 1 10- 1 103 102 1 10 10- 1 103 102 1 10 IC (mA) IC (mA) VCE = 1 V IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C
Fig. 12. BC817-40: DC current gain as a function of Fig. 13. BC817-40: Base-emitter saturation voltage as a collector current; typical values function of collector current; typical values
006aaa139 1 006aaa142 1.2 (6) (5) (4) (3) (2) (1) VCEsat IC (V) (A) 10- 1 0.8 (7) (8) (1) (9) (2) 10- 2 (3) 0.4 (10) 10- 3 0 10- 1 103 102 1 10 0 1 2 3 4 5 IC (mA) VCE (V) IC/IB = 10 Tamb = 25 °C (1) Tamb = 150 °C (1) IB = 12.0 mA (2) Tamb = 25 °C (2) IB = 10.8 mA (3) Tamb = -55 °C (3) IB = 9.6 mA
Fig. 14. BC817-40: Collector-emitter saturation voltage
(4) IB = 8.4 mA
as a function of collector current; typical values
(5) IB = 7.2 mA (6) IB = 6.0 mA (7) IB = 4.8 mA (8) IB = 3.6 mA (9) IB = 2.4 mA (10) IB = 1.2 mA
Fig. 15. BC817-40: Collector current as a function of collector-emitter voltage; typical values
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet Rev. 8 — 1 July 2022 8 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
006aaa133 800 006aaa136 10 hFE V 600 (1) BEsat (V) 400 (2) 1 (1) (2) (3) 200 (3) 0 10- 1 10- 1 103 102 1 10 10- 1 103 102 1 10 IC (mA) IC (mA) VCE = 1 V IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C
Fig. 12. BC817-40: DC current gain as a function of Fig. 13. BC817-40: Base-emitter saturation voltage as a collector current; typical values function of collector current; typical values
006aaa139 1 006aaa142 1.2 (6) (5) (4) (3) (2) (1) VCEsat IC (V) (A) 10- 1 0.8 (7) (8) (1) (9) (2) 10- 2 (3) 0.4 (10) 10- 3 0 10- 1 103 102 1 10 0 1 2 3 4 5 IC (mA) VCE (V) IC/IB = 10 Tamb = 25 °C (1) Tamb = 150 °C (1) IB = 12.0 mA (2) Tamb = 25 °C (2) IB = 10.8 mA (3) Tamb = -55 °C (3) IB = 9.6 mA
Fig. 14. BC817-40: Collector-emitter saturation voltage
(4) IB = 8.4 mA
as a function of collector current; typical values
(5) IB = 7.2 mA (6) IB = 6.0 mA (7) IB = 4.8 mA (8) IB = 3.6 mA (9) IB = 2.4 mA (10) IB = 1.2 mA
Fig. 15. BC817-40: Collector current as a function of collector-emitter voltage; typical values
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet Rev. 8 — 1 July 2022 8 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents