Datasheet SI2302DS (Nexperia) - 8

制造商Nexperia
描述N-Channel Enhancement Mode Field-Effect Transistor
页数 / 页13 / 8 — Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect …
文件格式/大小PDF / 366 Kb
文件语言英语

Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect transistor. Fig 9

Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor Fig 9

该数据表的模型线

文件文字版本

Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor
03ag05 03ah78 1.2 10-1 ID VGS(th) (A) (V) 10-2 typ 0.8 min 10-3 min typ 10-4 0.4 10-5 0 10-6 -60 0 60 120 180 0 0.4 0.8 1.2 T V j (ºC) GS (V) ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature. gate-source voltage.
03ae98 103 C (pF) Ciss 102 Coss Crss 10 10-1 1 10 102 VDS (V) VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 7 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers