Datasheet SI2302DS (Nexperia) - 9

Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor
03ae97 03ae99 10 5 IS VGS = 0 V V I GS D = 3.6 A (A) (V) Tj = 25 ºC 8 4 VDD = 10 V 6 3 4 2 2 1 150 ºC Tj = 25 ºC 0 0 0 0.4 0.8 1.2 0 1 2 3 4 5 6 VSD (V) QG (nC) Tj = 25 °C and 150 °C; VGS = 0 V ID = 3.6 A; VDD = 10 V
Fig 12. Source (diode forward) current as a function of Fig 13. Gate-source voltage as a function of gate source-drain (diode forward) voltage; typical charge; typical values. values.
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 8 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers