Preliminary Datasheet IRL3502 (International Rectifier) - 4
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 8 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| 文件格式/大小 | PDF / 84 Kb |
| 文件语言 | 英语 |
Fig 5. Fig 6. Fig 7. Fig 8
该数据表的模型线
文件文字版本
IRL3502 8000 15 VGS = 0V, f = 1MHz ID = 64A C = C + C C SHORTED iss gs gd , ds C = C rss gd C = C + C V = 16V oss ds gd DS 12 6000 Ciss 9 4000 Coss 6 C, Capacitance (pF) 2000 3 Crss GSV , Gate-to-Source Voltage (V) 0 0 1 10 100 0 40 80 120 160 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us T = 150 C ° J 100us 100 100 D T = 25 C ° I , Drain Current (A) J 1ms I , Reverse Drain Current (A) SD T = 25 C ° C T = 150 C ° J V = 0 V GS Single Pulse 10ms 10 10 0.5 1.0 1.5 2.0 2.5 1 10 100 V ,Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us T = 150 C ° J 100us 100 100 D T = 25 C ° I , Drain Current (A) J 1ms I , Reverse Drain Current (A) SD T = 25 C ° C T = 150 C ° J V = 0 V GS Single Pulse 10ms 10 10 0.5 1.0 1.5 2.0 2.5 1 10 100 V ,Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage