Preliminary Datasheet IRL3502 (International Rectifier) - 5
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 8 / 5 — Fig 9. Fig 10. Fig 11 |
| 文件格式/大小 | PDF / 84 Kb |
| 文件语言 | 英语 |
Fig 9. Fig 10. Fig 11
该数据表的模型线
文件文字版本
IRL3502 120 800 ID LIMITED BY PACKAGE TOP 29A 100 40A BOTTOM 64A 600 80 60 400 40 I , Drain Current (A) D 200 20 AS 0 E , Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 25 50 75 100 125 150 T , Case Temperature ( C) ° C Starting T , Junction Temperature( C) ° J
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy Vs. Drain Current 1 D = 0.50 thJC (Z ) 0.20 0.10 0.1 0.05 PDM t 0.02 1 SINGLE PULSE 0.01 (THERMAL RESPONSE) t2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy Vs. Drain Current 1 D = 0.50 thJC (Z ) 0.20 0.10 0.1 0.05 PDM t 0.02 1 SINGLE PULSE 0.01 (THERMAL RESPONSE) t2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case