Datasheet SB3H90, SB3H100 (Vishay) - 3
| 制造商 | Vishay |
| 描述 | High Voltage Schottky Plastic Rectifier |
| 页数 / 页 | 4 / 3 — SB3H90, SB3H100. PACKAGE OUTLINE DIMENSIONS. DO-201AD |
| 文件格式/大小 | PDF / 76 Kb |
| 文件语言 | 英语 |
SB3H90, SB3H100. PACKAGE OUTLINE DIMENSIONS. DO-201AD
该数据表的模型线
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SB3H90, SB3H100
www.vishay.com Vishay General Semiconductor 100 1000 T = 25 °C T = 175 °C J J f = 1.0 MHz V = 50 mV ent (A) sig p-p 10 e (pF) T = 150 °C d Curr J 1 100 Forwar T = 125 °C T = 100 °C s J J Capacitanc 0.1 T = 25 °C J Junction tantaneou s Pulse Width = 300 μs In 1 % Duty Cycle 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 100 T = 150 °C 100 J ent (μA) T = 125 °C J 10 e Curr 10 s T = 100 °C J Rever s 1 1 0.1 ient Thermal Impedance (°C/W) tantaneou T = 25 °C s s J n a In Tr 0.01 0.1 20 40 60 80 100 0 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 13-Aug-13
3
Document Number: 88720 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor 100 1000 T = 25 °C T = 175 °C J J f = 1.0 MHz V = 50 mV ent (A) sig p-p 10 e (pF) T = 150 °C d Curr J 1 100 Forwar T = 125 °C T = 100 °C s J J Capacitanc 0.1 T = 25 °C J Junction tantaneou s Pulse Width = 300 μs In 1 % Duty Cycle 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 100 T = 150 °C 100 J ent (μA) T = 125 °C J 10 e Curr 10 s T = 100 °C J Rever s 1 1 0.1 ient Thermal Impedance (°C/W) tantaneou T = 25 °C s s J n a In Tr 0.01 0.1 20 40 60 80 100 0 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 13-Aug-13
3
Document Number: 88720 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000