Datasheet IRF2804, IRF2804S, IRF2804L (International Rectifier) - 2

IRF2804/S/L
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) SMD Static Drain-to-Source On-Resistance ––– 1.5 2.0 mΩ VGS = 10V, ID = 75A f RDS(on) TO-220 Static Drain-to-Source On-Resistance ––– 1.8 2.3 VGS = 10V, ID = 75A f VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 130 ––– ––– S VDS = 10V, ID = 75A IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Qg Total Gate Charge ––– 160 240 nC ID = 75A Qgs Gate-to-Source Charge ––– 41 62 VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– 66 99 VGS = 10V f td(on) Turn-On Delay Time ––– 13 ––– ns VDD = 20V tr Rise Time ––– 120 ––– ID = 75A td(off) Turn-Off Delay Time ––– 130 ––– RG = 2.5Ω tf Fall Time ––– 130 ––– VGS = 10V f LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, D 6mm (0.25in.) G LS Internal Source Inductance ––– 7.5 ––– from package S and center of die contact Ciss Input Capacitance ––– 6450 ––– pF VGS = 0V Coss Output Capacitance ––– 1690 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 840 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 5350 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 1520 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 2210 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current ––– ––– 280 MOSFET symbol (Body Diode) A showing the G ISM Pulsed Source Current ––– ––– 1080 integral reverse S (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V f trr Reverse Recovery Time ––– 56 84 ns TJ = 25°C, IF = 75A, VDD = 20V Qrr Reverse Recovery Charge ––– 67 100 nC di/dt = 100A/µs f ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. ‚ Limited by TJmax, starting TJ = 25°C, ‡ This value determined from sample failure population. 100% L=0.24mH, RG = 25Ω, IAS = 75A, VGS =10V. tested to this value in production. Part not recommended for use above this value. ˆ This is applied to D2Pak, when mounted on 1" square PCB ƒ ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, ( FR-4 or G-10 Material ). For recommended footprint and T ≤ J 175°C. soldering techniques refer to application note #AN-994. „ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ‰ Max RDS(on) for D2Pak and TO-262 (SMD) devices. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2 www.irf.com