Datasheet 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 (Vishay) - 5
| 制造商 | Vishay |
| 描述 | N-Channel JFETs |
| 页数 / 页 | 7 / 5 — 2N/SST5484 Series. Vishay Siliconix. Transfer Characteristics. … |
| 文件格式/大小 | PDF / 67 Kb |
| 文件语言 | 英语 |
2N/SST5484 Series. Vishay Siliconix. Transfer Characteristics. Transconductance vs. Gate-Source Voltage
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2N/SST5484 Series Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics Transfer Characteristics
10 10 VGS(off) = –2 V VDS = 10 V VGS(off) = –3 V VDS = 10 V 8 8 TA = –55_C TA = –55_C 25_C 6 25_C 6 125_C 125_C 4 4 Drain Current (mA) Drain Current (mA) – – I D I D 2 2 0 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage
10 10 VGS(off) = –2 V VDS = 10 V VGS(off) = –3 V VDS = 10 V f = 1 kHz f = 1 kHz 8 8 TA = –55_C TA = –55_C 6 25_C 6 25_C ransconductance (mS) ransconductance (mS) 4 125_C 4 125_C Forward T Forward T – 2 2 – fsg fsg 0 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
300 100 T g R A = 25_C fs L A + Ω ) V 1 ) R g L os 240 80 Assume VDD = 15 V, VDS = 5 V 10 V VGS(off) = –2 V R + L ID 180 60 –3 V oltage Gain 120 V 40 – VGS(off) = –2 V VA Drain-Source On-Resistance ( – 60 20 (on) –3 V r DS 0 0 0.1 1 10 0.1 1 10 ID – Drain Current (mA) ID – Drain Current (mA) Document Number: 70246 www.vishay.com S-04028—Rev. E, 04-Jun-01
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TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics Transfer Characteristics
10 10 VGS(off) = –2 V VDS = 10 V VGS(off) = –3 V VDS = 10 V 8 8 TA = –55_C TA = –55_C 25_C 6 25_C 6 125_C 125_C 4 4 Drain Current (mA) Drain Current (mA) – – I D I D 2 2 0 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage
10 10 VGS(off) = –2 V VDS = 10 V VGS(off) = –3 V VDS = 10 V f = 1 kHz f = 1 kHz 8 8 TA = –55_C TA = –55_C 6 25_C 6 25_C ransconductance (mS) ransconductance (mS) 4 125_C 4 125_C Forward T Forward T – 2 2 – fsg fsg 0 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
300 100 T g R A = 25_C fs L A + Ω ) V 1 ) R g L os 240 80 Assume VDD = 15 V, VDS = 5 V 10 V VGS(off) = –2 V R + L ID 180 60 –3 V oltage Gain 120 V 40 – VGS(off) = –2 V VA Drain-Source On-Resistance ( – 60 20 (on) –3 V r DS 0 0 0.1 1 10 0.1 1 10 ID – Drain Current (mA) ID – Drain Current (mA) Document Number: 70246 www.vishay.com S-04028—Rev. E, 04-Jun-01
7-5