Datasheet FFB2222A, FMB2222A, MMPQ2222A (ON Semiconductor) - 4

Values are at TA = 25°C unless otherwise noted. Symbol Parameter V(BR)CEO Collector-Emitter Breakdown Voltage(3) V(BR)CBO Collector-Base Breakdown Voltage Conditions Min. Typ. Max. Unit IC = 10 mA, IB = 0 40 V IC = 10 μA, IE = 0 75 V 5.0 Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 10 nA IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA V(BR)EBO hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 35 IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 V(3) 100 IC = 150 mA, VCE = 1.0 V(3) 50 IC = 500 mA, VCE = 10 V(3) 40 IC = 150 mA, VCE = 10 V 300 IC = 150 mA, IB = 15 mA 0.3 IC = 500 mA, IB = 50 mA 1.0 IC = 150 mA, IB = 15 mA 1.2 IC = 500 mA, IB = 50 mA 2.0 VCE(sat) Collector-Emitter Saturation Voltage(3) VBE(sat) Base-Emitter Saturation Voltage(3) fT Current Gain -Bandwidth Product IC = 20 mA, VCE = 20 V,
f = 100 MHz 300 MHz Cobo Output Capacitance VCB = 10 V, IE = 0,
f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 100 kHz 20 pF NF Noise Figure IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 2.0 dB td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA V
V 8 ns 20 ns 180 ns 40 ns Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 www.fairchildsemi.com
3 FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier Electrical Characteristics