Datasheet FFB2222A, FMB2222A, MMPQ2222A (ON Semiconductor) - 5

V CESAT -COLLECTOR-EMITTER VOLTAGE (V) h FE -TYPICAL PULSED CURRENT GAIN 500
V CE = 5V 400
125 °C 300
200 25 °C 100
-40 °C 0
0.1 0.3 1
3
10
30
100
I C -COLLECTOR CURRENT (mA) 300 β = 10 1 -40 °C 0.8 25 °C
125 °C 0.6 0.4
1
I C 10
100
-COLLECTOR CURRENT (mA) β = 10
0.3 25 °C 0.1
-40 °C 1 10
100
I C -COLLECTOR CURRENT (mA) 500 500 1
VCE = 5V
0.8 -40 °C
25 °C 0.6
125 °C 0.4 0.2
0.1 Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current 1
10
I C -COLLECTOR CURRENT (mA) 25 Figure 10. Base-Emitter On Voltage vs.
Collector Current 500
100 V CB 20 = 40V CAPACITANCE (pF) I CBO -COLLECTOR CURRENT (nA) 125 °C 0.2 Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
V BE(ON) -BASE-EMITTER ON VOLTAGE (V) V BESAT -BASE-EMITTER VOLTAGE (V) Figure 7. Typical Pulsed Current Gain vs.
Collector Current 0.4 10
1
0.1 16
12
C te 8
4 25 50
75
100
125
T A -AMBIENT TEMPERATURE (° C) 150 0.1 Figure 11. Collector Cut-Off Current vs.
Ambient Temperature © 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 f = 1 MHz C ob 1
10
REVERSE BIAS VOLTAGE (V) 100 Figure 12. Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage www.fairchildsemi.com
4 FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier Typical Performance Characteristics