Datasheet PE4259 (pSemi)
| 制造商 | pSemi |
| 描述 | SPDT High Power UltraCMOS 10 MHz–3.0 GHz RF Switch |
| 页数 / 页 | 10 / 1 — Product Specification PE4259. SPDT High Power UltraCMOS®. Product … |
| 文件格式/大小 | PDF / 575 Kb |
| 文件语言 | 英语 |
Product Specification PE4259. SPDT High Power UltraCMOS®. Product Description. 10 MHz–3.0 GHz RF Switch. Features
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Product Specification PE4259 SPDT High Power UltraCMOS® Product Description 10 MHz–3.0 GHz RF Switch
The PE4259 UltraCMOS® RF switch is designed to
Features
cover a broad range of applications from 10 MHz Single-pin or complementary CMOS through 3000 MHz. This reflective switch integrates logic control inputs on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be Low insertion loss: controlled using either single-pin or complementary 0.35 dB @ 1000 MHz control inputs. Using a nominal +3-volt power supply voltage, a typical input 1dB compression point of 0.5 dB @ 2000 MHz +33.5 dBm can be achieved. Isolation of 30 dB @ 1000 MHz The PE4259 is manufactured on pSemi’s High ESD tolerance of 2 kV HBM UltraCMOS process, a patented variation of silicon- Typical input 1 dB compression point on-insulator (SOI) technology on a sapphire of +33.5 dBm substrate, offering the performance of GaAs with the 1.8V minimum power supply voltage economy and integration of conventional CMOS. Ultra-small SC-70 package
Figure 1. Functional Diagram Figure 2. Package Type SC-70
6‐lead SC‐70 RFC D ES RF1 RF2 ESD ESD CMOS Control Driver CTRL CTRL or VDD DOC-02109 Document No. DOC-03694-5 │ www.psemi.com ©2005-2023 pSemi Corporation All rights reserved.
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The PE4259 UltraCMOS® RF switch is designed to
Features
cover a broad range of applications from 10 MHz Single-pin or complementary CMOS through 3000 MHz. This reflective switch integrates logic control inputs on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be Low insertion loss: controlled using either single-pin or complementary 0.35 dB @ 1000 MHz control inputs. Using a nominal +3-volt power supply voltage, a typical input 1dB compression point of 0.5 dB @ 2000 MHz +33.5 dBm can be achieved. Isolation of 30 dB @ 1000 MHz The PE4259 is manufactured on pSemi’s High ESD tolerance of 2 kV HBM UltraCMOS process, a patented variation of silicon- Typical input 1 dB compression point on-insulator (SOI) technology on a sapphire of +33.5 dBm substrate, offering the performance of GaAs with the 1.8V minimum power supply voltage economy and integration of conventional CMOS. Ultra-small SC-70 package
Figure 1. Functional Diagram Figure 2. Package Type SC-70
6‐lead SC‐70 RFC D ES RF1 RF2 ESD ESD CMOS Control Driver CTRL CTRL or VDD DOC-02109 Document No. DOC-03694-5 │ www.psemi.com ©2005-2023 pSemi Corporation All rights reserved.
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