Datasheet LM285, LM385B (ON Semiconductor) - 3

制造商ON Semiconductor
描述Micropower Voltage Reference Diodes
页数 / 页10 / 3 — LM285, LM385B. ELECTRICAL CHARACTERISTICS. LM285−1.2. LM385−1.2. …
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LM285, LM385B. ELECTRICAL CHARACTERISTICS. LM285−1.2. LM385−1.2. LM385B−1.2. Characteristic. Symbol. Min. Typ. Max. Unit. www.onsemi.com

LM285, LM385B ELECTRICAL CHARACTERISTICS LM285−1.2 LM385−1.2 LM385B−1.2 Characteristic Symbol Min Typ Max Unit www.onsemi.com

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LM285, LM385B ELECTRICAL CHARACTERISTICS
(TA = 25°C, unless otherwise noted)
LM285−1.2 LM385−1.2
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LM385B−1.2 Characteristic Symbol Min Typ Max Min Typ Max Unit
Reverse Breakdown Voltage Change with Current DV(BR)R mV IRmin v IR v 1.0 mA, TA = +25°C − − 1.0 − − 2.0 TA = Tlow to Thigh (Note 2) − − 1.5 − − 2.5 1.0 mA v IR v 20 mA, TA = +25°C − − 10 − − 20 TA = Tlow to Thigh (Note 2) − − 20 − − 25 Reverse Dynamic Impedance Z W IR = 100 mA, TA = +25°C − 0.6 − − 0.6 − Average Temperature Coefficient DV(BR)/DT ppm/°C 20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2) − 80 − − 80 − Wideband Noise (RMS) n mV IR = 100 mA, 10 Hz v f v 10 kHz − 120 − − 120 − Long Term Stability S ppm/kHR IR = 100 mA, TA = +25°C ± 0.1°C − 20 − − 20 − 2. Tlow = −40°C for LM285−1.2, LM285−2.5 Thigh = +85°C for LM285−1.2, LM285−2.5 Tlow = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 Thigh = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
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