Datasheet MMBT4403 (ON Semiconductor) - 4

2 N 4403 / MMBT4403 — PNP Ge Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit Off Characteristics
Collector-Emitter Breakdown V(BR)CEO Voltage(5) IC = -1.0 mA, IB = 0 -40 V Collector-Base Breakdown V(BR)CBO I Voltage C = -0.1 mA, IE = 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -0.1 mA, IC = 0 -5.0 V IBL Base Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 μA ICEX Collector Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 μA
neral-Purpose Amplifier On Characteristics
IC = -0.1 mA, VCE = -1.0 V 30 IC = -1.0 mA, VCE = -1.0 V 60 hFE DC Current Gain IC = -10 mA, VCE = -1.0 V 100 IC = -150 mA, VCE = -2.0 V(5) 100 300 IC = -500 mA, VCE = -2.0 V(5) 20 Collector-Emitter Saturation IC = -150 mA, IB = -15 mA -0.40 VCE(sat) V Voltage(5) IC = -500 mA, IB = -50 mA -0.75 IC = -150 mA, IB = -15 mA(5) -0.75 -0.95 VBE(sat) Base-Emitter Saturation Voltage V IC = -500 mA, IB = -50 mA -1.30
Small Signal Characteristics
I f C = -20 mA, VCE = -10 V, T Current Gain - Bandwidth Product 200 MHz f = 100 MHz V C CB = -10 V, IE = 0, cb Collector-Base Capacitance 8.5 pF f = 140 kHz V C BE = -0.5 V, IC = 0, eb Emitter-Base Capacitance 30 pF f = 140 kHz I h C = -1.0 mA, VCE = -10 V, ie Input Impedance 1.5 15.0 kΩ f = 1.0 kHz I h C = -1.0 mA, VCE = -10 V, re Voltage Feedback Ratio 0.1 8.0 x10-4 f = 1.0 kHz I h C = -1.0 mA, VCE = -10 V, fe Small-Signal Current Gain 60 500 f = 1.0 kHz I h C = -1.0 mA, VCE = -10 V, oe Output Admittance 1 100 μmhos f = 1.0 kHz
Switching Characteristics
td Delay Time V 15 ns CC = -30 V, IC = -150 mA, I t B1 = -15 mA r Rise Time 20 ns ts Storage Time V 225 ns CC = -30 V, IC = -150 mA, I t B1 = IB2 = -15 mA f Fall Time 30 ns
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3