Datasheet 2N4403, MMBT4403 (ON Semiconductor) - 5

2 N 4403 / MMBT4403 — PNP Ge Typical Performance Characteristics ) V IN ( E A
500
G
0.5
G A V = 5V
β
CE LT = 10 ENT
400
O
0.4
125 °C V R URR E
300
ITT
0.3
M 25 °C LSED C E
200
25 °C R
0.2
PU TO L C E CA
100
- 40 °C
0.1
LL 125 °C YPI O - 40 °C neral-Purpose Amplifier T C -
0
-
0
FE
0.1 0.3 1 3 10 30 100 300
AT h S
1 10 100 500
I - CE C COLLECTOR CURRENT (mA) V I - COLLECTOR CURRE NT (mA) C Figure 3. Typical Pulsed Current Gain vs. Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Collector Current ) ) V ( (V E
1
E
1
G G TA TA L L - 40 °C - 40 °C O
0.8
O
0.8
V V R N E 25 °C O
0.6
T
0.6
R 25 °C IT E M T E 125
0.4
°C IT
0.4
E M 125°C S
β
= 10 E A E S V = 5V CE - B
0.2
A
0.2
B AT S - BE
0
N) V
1 10 100 500
(O
0
BE
0.1 1 10 25
I V C - COLLECTOR CURRE NT (mA) I - COLLECTOR CURRE NT (mA) C Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage vs. vs. Collector Current Collector Current ) A
100 20
(n T V = 35V CB N E )
16 10
R F p R ( U E C
12
R
1
NC C O ib T TA C CI
8
LE A P L
0.1
A O C
4
C ob C - I CBO
0.0125 50 75 100 125 00.1 1 10 50
T - A AMBIE NT TEMP ERATURE ( C) ° REVERSE BIAS VOLTAGE (V) Figure 7. Collector Cut-Off Current vs. Figure 8. Input and Output Capacitance vs. Ambient Temperature Reverse Bias Voltage
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