Datasheet MTP33N10E (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 33 Amps, 100 Volts |
| 页数 / 页 | 8 / 2 — Preferred Device. N−Channel TO−220. http://onsemi.com. 33 AMPERES. 100 … |
| 文件格式/大小 | PDF / 269 Kb |
| 文件语言 | 英语 |
Preferred Device. N−Channel TO−220. http://onsemi.com. 33 AMPERES. 100 VOLTS. DS(on) = 60 m. N−Channel. MAXIMUM RATINGS. Rating. Symbol
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MTP33N10E
Preferred Device
Power MOSFET 33 Amps, 100 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
http://onsemi.com
low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly
33 AMPERES
well suited for bridge circuits where diode speed and commutating
100 VOLTS
safe operating areas are critical and offer additional safety margin
R
against unexpected voltage transients.
DS(on) = 60 m
Ω • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a
N−Channel
Discrete Fast Recovery Diode D • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
S Drain−Source Voltage VDSS 100 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 100 Vdc
MARKING DIAGRAM
Gate−Source Voltage
& PIN ASSIGNMENT
− Continuous VGS ± 20 Vdc 4 − Non−Repetitive (tp ≤ 10 ms) VGSM ± 40 Vpk 4 Drain Drain Current − Continuous ID 33 Adc Drain Current − Continuous @ 100°C ID 20 Drain Current − Single Pulse (tp ≤ 10 μs) IDM 99 Apk
TO−220AB
Total Power Dissipation P
CASE 221A
D 125 Watts Derate above 25°C 1.0 W/°C
STYLE 5
MTP33N10E LLYWW Operating and Storage Temperature Range TJ, Tstg − 55 to °C 150 1 2 1 3 Single Pulse Drain−to−Source Avalanche E 3 AS 545 mJ Gate Source Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, 2 IL = 33 Apk, L = 1.000 mH, RG = 25 Ω) Drain Thermal Resistance °C/W MTP33N10E = Device Code − Junction to Case RθJC 1.0 LL = Location Code − Junction to Ambient RθJA 62.5 Y = Year Maximum Lead Temperature for Soldering T WW = Work Week L 260 °C Purposes, 1/8″ from case for 10 sec.
ORDERING INFORMATION Device Package Shipping
MTP33N10E TO−220AB 50 Units/Rail
Preferred
devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 5 MTP33N10E/D
Preferred Device
Power MOSFET 33 Amps, 100 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
http://onsemi.com
low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly
33 AMPERES
well suited for bridge circuits where diode speed and commutating
100 VOLTS
safe operating areas are critical and offer additional safety margin
R
against unexpected voltage transients.
DS(on) = 60 m
Ω • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a
N−Channel
Discrete Fast Recovery Diode D • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
S Drain−Source Voltage VDSS 100 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 100 Vdc
MARKING DIAGRAM
Gate−Source Voltage
& PIN ASSIGNMENT
− Continuous VGS ± 20 Vdc 4 − Non−Repetitive (tp ≤ 10 ms) VGSM ± 40 Vpk 4 Drain Drain Current − Continuous ID 33 Adc Drain Current − Continuous @ 100°C ID 20 Drain Current − Single Pulse (tp ≤ 10 μs) IDM 99 Apk
TO−220AB
Total Power Dissipation P
CASE 221A
D 125 Watts Derate above 25°C 1.0 W/°C
STYLE 5
MTP33N10E LLYWW Operating and Storage Temperature Range TJ, Tstg − 55 to °C 150 1 2 1 3 Single Pulse Drain−to−Source Avalanche E 3 AS 545 mJ Gate Source Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, 2 IL = 33 Apk, L = 1.000 mH, RG = 25 Ω) Drain Thermal Resistance °C/W MTP33N10E = Device Code − Junction to Case RθJC 1.0 LL = Location Code − Junction to Ambient RθJA 62.5 Y = Year Maximum Lead Temperature for Soldering T WW = Work Week L 260 °C Purposes, 1/8″ from case for 10 sec.
ORDERING INFORMATION Device Package Shipping
MTP33N10E TO−220AB 50 Units/Rail
Preferred
devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 5 MTP33N10E/D