Datasheet IRFP22N60K (Vishay)
| 制造商 | Vishay |
| 描述 | Power MOSFET in TO-247AC package |
| 页数 / 页 | 10 / 1 — IRFP22N60K. Power MOSFET. FEATURES. TO-247AC. Note. PRODUCT SUMMARY. … |
| 文件格式/大小 | PDF / 504 Kb |
| 文件语言 | 英语 |
IRFP22N60K. Power MOSFET. FEATURES. TO-247AC. Note. PRODUCT SUMMARY. BENEFITS. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
该数据表的模型线
文件文字版本
IRFP22N60K
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Low gate charge Qg results in simple drive
TO-247AC
requirement Available • Improved gate, avalanche and dynamic dV/dt Available G ruggedness • Fully characterized capacitance and avalanche voltage and current S D S • Enhanced body diode dV/dt capability G • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
PRODUCT SUMMARY
RoHS-compliant and / or parts that are non RoHS-compliant. For VDS (V) 600 example, parts with lead (Pb) terminations are not RoHS-compliant. RDS(on) (Ω) VGS = 10 V 0.24 Please see the information / tables in this datasheet for details Qg (max.) (nC) 150
BENEFITS
Qgs (nC) 45 • Hard switching primary or PFS switch Qgd (nC) 76 Configuration Single • Switch mode power supply (SMPS) • Uninterruptable power supply • High speed power switching • Motor drive
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP22N60KPbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600 V Gate-source voltage VGS ± 30 TC = 25 °C 22 Continuous drain current VGS at 10 V ID TC = 100 °C 14 A Pulsed drain current a IDM 88 Linear derating factor 2.9 W/°C Single pulse avalanche energy b EAS 380 mJ Repetitive avalanche current a IAR 22 A Repetitive avalanche energy a EAR 37 mJ Maximum power dissipation TC = 25 °C PD 370 W Peak diode recovery dV/dt c dV/dt 15 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 Ω, IAS = 22 A (see fig. 12) c. ISD ≤ 22 A, dI/dt ≤ 360 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S22-0046, Rev. C, 24-Jan-2021
1
Document Number: 91208 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Low gate charge Qg results in simple drive
TO-247AC
requirement Available • Improved gate, avalanche and dynamic dV/dt Available G ruggedness • Fully characterized capacitance and avalanche voltage and current S D S • Enhanced body diode dV/dt capability G • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
PRODUCT SUMMARY
RoHS-compliant and / or parts that are non RoHS-compliant. For VDS (V) 600 example, parts with lead (Pb) terminations are not RoHS-compliant. RDS(on) (Ω) VGS = 10 V 0.24 Please see the information / tables in this datasheet for details Qg (max.) (nC) 150
BENEFITS
Qgs (nC) 45 • Hard switching primary or PFS switch Qgd (nC) 76 Configuration Single • Switch mode power supply (SMPS) • Uninterruptable power supply • High speed power switching • Motor drive
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP22N60KPbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600 V Gate-source voltage VGS ± 30 TC = 25 °C 22 Continuous drain current VGS at 10 V ID TC = 100 °C 14 A Pulsed drain current a IDM 88 Linear derating factor 2.9 W/°C Single pulse avalanche energy b EAS 380 mJ Repetitive avalanche current a IAR 22 A Repetitive avalanche energy a EAR 37 mJ Maximum power dissipation TC = 25 °C PD 370 W Peak diode recovery dV/dt c dV/dt 15 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 Ω, IAS = 22 A (see fig. 12) c. ISD ≤ 22 A, dI/dt ≤ 360 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S22-0046, Rev. C, 24-Jan-2021
1
Document Number: 91208 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000