Datasheet BLF881 (Ampleon) - 3
| 制造商 | Ampleon |
| 描述 | UHF power LDMOS transistor |
| 页数 / 页 | 18 / 3 — BLF881; BLF881S. UHF power LDMOS transistor. 4. Limiting values. Table 4. … |
| 文件格式/大小 | PDF / 1.3 Mb |
| 文件语言 | 英语 |
BLF881; BLF881S. UHF power LDMOS transistor. 4. Limiting values. Table 4. Limiting values. Symbol. Parameter. Conditions. Min. Max. Unit
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BLF881; BLF881S UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 104 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
R [1] th(j-c) thermal resistance from junction to case Tcase = 80 C; 0.95 K/W PL(AV) = 70 W [1] Rth(j-c) is measured under RF conditions.
6. Characteristics Table 6. DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.35 mA [1] 104 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 135 mA [1] 1.4 - 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGSth + 3.75 V; VDS = 10 V 19 21 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 140 nA RDS(on) drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 4.5 A [1] - 210 - m Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 100 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 33.5 - pF Crss reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 1 - pF [1] ID is the drain current.
Table 7. RF characteristics
Th = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit 2-Tone, class AB
VDS drain-source voltage - 50 - V IDq quiescent drain current - 0.5 - A PL(PEP) peak envelope power load power - 140 - W Gp power gain 20 21 - dB D drain efficiency 45 49 - % IMD3 third-order intermodulation distortion - 34 30 dBc BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 3 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
BLF881; BLF881S UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 104 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
R [1] th(j-c) thermal resistance from junction to case Tcase = 80 C; 0.95 K/W PL(AV) = 70 W [1] Rth(j-c) is measured under RF conditions.
6. Characteristics Table 6. DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.35 mA [1] 104 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 135 mA [1] 1.4 - 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGSth + 3.75 V; VDS = 10 V 19 21 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 140 nA RDS(on) drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 4.5 A [1] - 210 - m Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 100 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 33.5 - pF Crss reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 1 - pF [1] ID is the drain current.
Table 7. RF characteristics
Th = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit 2-Tone, class AB
VDS drain-source voltage - 50 - V IDq quiescent drain current - 0.5 - A PL(PEP) peak envelope power load power - 140 - W Gp power gain 20 21 - dB D drain efficiency 45 49 - % IMD3 third-order intermodulation distortion - 34 30 dBc BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 3 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents